PLZ Series
www.vishay.com
Vishay Semiconductors
Zener Diodes Permitting 500 mW Power Dissipation
FEATURES
eSMP® Series
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2
1
20278
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LINKS TO ADDITIONAL RESOURCES
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PRIMARY CHARACTERISTICS
PARAMETER
VZ range nom.
Test current IZT
VZ specification
Circuit configuration
VALUE
2.0 to 39
5 to 20
Pulse current
Single
•
•
•
•
UNIT
V
mA
Available
Sillicon planar Zener diodes, ultra small
Low profile MicroSMF (DO-219AC) package
Low leakage current
Excellent stability
High temperature soldering: 260 °C / 10 s at
terminals
Wave and reflow solderable (reflow as per
JPC / JEDEC® J-STD 020) (double wave as per
IEC 61760-1)
AEC-Q101 qualified available
Base P/N-G3 - RoHS-compliant, green,
industrial grade
Base P/N-HG3 - RoHS-compliant, green, AEC-Q101 qualified
ESD immunity acc. IEC 61000-4-2 acc. to part table
Surge performance acc. to part table
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
PLZ-Series
Part number-G3/H
PLZ-Series
Part number-HG3_A/H
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
4500 per 7" reel (8 mm tape)
22 500 / box
PACKAGE
PACKAGE NAME
MicroSMF (DO-219AC)
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY LEVEL
SOLDERING CONDITIONS
4.8 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C / 10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Power dissipation
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm, solder land
10 mm x 10 mm, Tamb = 85 °C
Ptot
500
Power dissipation
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm, solder land
10 mm x 10 mm, Tamb = 25 °C
Ptot
960
Power dissipation
Mounted on FR4 board with recommended soldering footpads
(reflow)
Ptot
340
tp = 8/20 μs acc. IEC 61000-4-5 (PLZ5V1A to PLZ39D)
PZSM
100
W
tp = 8/20 μs acc. IEC 61000-4-5 (PLZ2V7A to PLZ4V7C)
PZSM
70
W
Z-current
IZ
Ptot/VZ
mA
Junction temperature
Tj
150
Tstg
-55 to +150
TEST CONDITION
SYMBOL
VALUE
UNIT
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm
RthJA
130
K/W
RthJL
40
K/W
TYP.
MAX.
UNIT
0.8
0.9
V
Non-repetitive peak surge power
dissipation
Storage temperature range
UNIT
mW
°C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Typ. thermal resistance junction to ambient air
Typ. thermal resistance junction to lead
ELECTRICAL SPECIFICATIONS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward Voltage
TEST CONDITION
SYMBOL
IF = 10 mA
VF
MIN.
Rev. 1.7, 27-May-2020
Document Number: 84830
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT
IZT1
V
mA
MIN.
MAX.
PLZ2V0A
2A0
1.88
2.10
PLZ2V0B
2B0
2.02
2.20
PLZ2V2A
2A2
2.12
2.30
PLZ2V2B
2B2
2.22
2.41
PLZ2V4A
2A4
2.33
2.52
PLZ2V4B
2B4
2.43
2.63
PLZ2V7A
2A7
2.54
2.75
PLZ2V7B
2B7
2.69
2.91
PLZ3V0A
3A0
2.85
3.07
PLZ3V0B
3B0
3.01
3.22
PLZ3V3A
3A3
3.16
3.38
PLZ3V3B
3B3
3.32
3.53
PLZ3V6A
3A6
3.455
3.695
PLZ3V6B
3B6
3.60
3.845
PLZ3V9A
3A9
3.74
4.10
PLZ3V9B
3B9
3.89
4.16
PLZ4V3A
4A3
4.04
4.29
PLZ4V3B
4B3
4.17
4.43
PLZ4V3C
4C3
4.30
4.57
PLZ4V7A
4A7
4.44
4.68
PLZ4V7B
4B7
4.55
4.80
PLZ4V7C
4C7
4.68
4.93
PLZ5V1A
5A1
4.81
5.07
PLZ5V1B
5B1
4.94
5.20
PLZ5V1C
5C1
5.09
5.37
PLZ5V6A
5A6
5.28
5.55
PLZ5V6B
5B6
5.45
5.73
PLZ5V6C
5C6
5.61
5.91
PLZ6V2A
6A2
5.78
6.09
PLZ6V2B
6B2
5.96
6.27
PLZ6V2C
6C2
6.12
6.44
PLZ6V8A
6A8
6.29
6.63
PLZ6V8B
6B8
6.49
6.83
PLZ6V8C
6C8
6.66
7.01
PLZ7V5A
7A5
6.85
7.22
PLZ7V5B
7B5
7.07
7.45
PLZ7V5C
7C5
7.29
7.67
PLZ8V2A
8A2
7.53
7.92
PLZ8V2B
8B2
7.78
8.19
PLZ8V2C
8C2
8.03
8.45
PLZ9V1A
9A1
8.29
8.73
PLZ9V1B
9B1
8.57
9.01
PLZ9V1C
9C1
8.83
9.30
Notes
(1) Pulse test: t 40 ms
p
(2) Pulse test: t = 8/20 μs acc. IEC 61000-4-5
p
(3) Contact and air discharge acc. IEC 61000-4-2
REVERSE
CURRENT
DYNAMIC
RESISTANCE
PEAK PULSE
CURRENT (2)
REVERSE
CLAMPING
VOLTAGE AT
IPPM
ESD
IMMUNITY (3)
IR at VR
ZZ at IZT
IPPM
VC
VESD
A
V
kV
MAX.
MAX.
5.56
5.56
5.67
5.67
5.79
5.79
5.91
5.98
6.02
6.18
6.22
6.29
6.40
6.47
6.54
6.60
6.66
6.73
6.80
6.93
7.06
7.40
8.14
8.23
8.40
8.61
8.82
8.99
9.32
9.45
9.66
10.29
10.50
10.60
11.06
11.34
11.54
11.80
12.00
12.60
12.86
13.17
13.55
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
μA
V
MAX.
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
MAX.
120
0.5
140
120
0.7
120
120
1.0
100
100
1.0
100
20
1.0
80
10
1.0
70
5
1.0
60
5
1.0
50
5
1.0
40
5
1.0
25
5
1.5
20
5
2.5
13
5
3.0
10
2
3.5
8
0.5
4.0
8
0.5
5.0
8
0.5
6.0
8
9.9
9.9
9.7
9.7
9.5
9.5
11.8
11.7
11.6
11.3
11.2
11.1
10.9
10.8
10.7
10.6
10.5
10.4
10.3
10.1
9.9
9.4
12.3
12.1
11.9
11.6
11.3
11.1
10.7
10.5
10.3
9.7
9.5
9.4
9.0
8.8
8.6
8.4
8.3
7.9
7.8
7.6
7.4
Rev. 1.7, 27-May-2020
Document Number: 84830
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT
IZT1
V
mA
REVERSE
CURRENT
DYNAMIC
RESISTANCE
PEAK PULSE
CURRENT (2)
REVERSE
CLAMPING
VOLTAGE AT
IPPM
ESD
IMMUNITY (3)
IR at VR
ZZ at IZT
IPPM
VC
VESD
A
V
kV
MAX.
MAX.
μA
V
MIN.
MAX.
PLZ10A
10A
9.12
9.59
20
MAX.
7.09
14.1
30
PLZ10B
10B
9.41
9.90
20
6.90
14.5
30
PLZ10C
10C
9.70
10.20
20
6.75
14.8
30
PLZ10D
10D
9.94
10.44
20
6.58
15.2
30
0.2
MAX.
7.0
8
6.47
15.5
30
6.25
16.0
30
PLZ11A
11A
10.18
10.71
10
PLZ11B
11B
10.50
11.05
10
PLZ11C
11C
10.82
11.38
10
6.10
16.4
30
PLZ12A
12A
11.13
11.71
10
5.95
16.8
30
PLZ12B
12B
11.44
12.03
10
PLZ12C
12C
11.74
12.35
10
0.2
0.2
8.0
9.0
10
12
5.80
17.2
30
5.43
18.4
30
5.29
18.9
30
5.15
19.4
30
PLZ13A
13A
12.11
12.75
10
PLZ13B
13B
12.55
13.21
10
PLZ13C
13C
12.99
13.66
10
5.05
19.8
30
PLZ15A
15A
13.44
14.13
10
4.93
20.3
30
PLZ15B
15B
13.89
14.62
10
PLZ15C
15C
14.35
15.09
10
0.2
0.2
10
11
14
16
4.76
21.0
30
4.50
22.0
30
4.25
23.5
30
4.18
23.9
30
PLZ16A
16A
14.80
15.57
10
PLZ16B
16B
15.25
16.04
10
PLZ16C
16C
15.69
16.51
10
3.96
25.2
30
PLZ18A
18A
16.22
17.06
10
3.95
25.3
30
PLZ18B
18B
16.82
17.70
10
PLZ18C
18C
17.42
18.33
10
0.2
0.2
12
13
18
23
3.77
26.5
30
3.69
27.1
30
PLZ20A
20A
18.02
18.96
10
3.43
29.1
30
PLZ20B
20B
18.63
19.59
10
3.40
29.4
30
PLZ20C
20C
19.23
20.22
10
3.33
30.0
30
PLZ20D
20D
19.72
20.72
10
3.18
31.4
30
0.2
15
28
PLZ22A
22A
20.15
21.20
5
3.13
31.9
30
PLZ22B
22B
20.64
21.71
5
3.07
32.6
30
PLZ22C
22C
21.08
22.17
5
2.82
35.4
25
PLZ22D
22D
21.52
22.63
5
2.80
35.6
25
PLZ24A
24A
22.05
23.18
5
2.77
36.1
25
0.2
17
30
PLZ24B
24B
22.61
23.77
5
PLZ24C
24C
23.12
24.31
5
PLZ24D
24D
23.63
24.85
5
2.61
38.3
25
PLZ27A
27A
24.26
25.52
5
2.55
39.2
25
PLZ27B
27B
24.97
26.26
5
2.49
40.1
25
PLZ27C
27C
25.63
26.95
5
2.32
43.0
20
PLZ27D
27D
26.29
27.64
5
2.30
43.5
20
0.2
0.2
19
21
35
45
2.70
37.0
25
2.64
37.8
25
Notes
(1) Pulse test: t 40 ms
p
(2) Pulse test: t = 8/20 μs acc. IEC 61000-4-5
p
(3) Contact and air discharge acc. IEC 61000-4-2
Rev. 1.7, 27-May-2020
Document Number: 84830
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
PEAK PULSE
CURRENT (2)
REVERSE
CLAMPING
VOLTAGE AT
IPPM
ESD
IMMUNITY (3)
VZ at IZT
IZT1
IR at VR
ZZ at IZT
IPPM
VC
VESD
V
mA
A
MIN.
MAX.
μA
V
MAX.
MAX.
V
kV
MAX.
MAX.
20
PLZ30A
30A
26.99
28.39
5
2.28
43.7
PLZ30B
30B
27.70
29.13
5
2.21
45.2
20
PLZ30C
30C
28.36
29.82
5
2.21
45.5
20
PLZ30D
30D
29.02
30.51
5
2.20
46.3
20
PLZ33A
33A
29.68
31.22
5
2.10
47.6
20
0.2
23
55
PLZ33B
33B
30.32
31.88
5
PLZ33C
33C
30.90
32.50
5
1.94
51.6
15
1.91
52.2
15
PLZ33D
33D
31.49
33.11
5
1.91
52.2
15
PLZ36A
36A
32.14
PLZ36B
36B
32.79
33.79
5
1.88
53.1
15
34.49
5
1.78
55.9
PLZ36C
36C
33.40
15
35.13
5
1.76
56.7
15
PLZ36D
36D
34.01
35.77
5
1.75
56.9
15
PLZ39A
39A
34.68
36.47
5
1.74
57.2
15
PLZ39B
39B
35.36
37.19
5
PLZ39C
39C
36.00
37.85
5
PLZ39D
39D
36.63
38.20
5
0.2
25
0.2
65
27
0.2
75
30
85
1.74
57.4
15
1.70
58.7
15
1.67
59.9
15
Notes
(1) Pulse test: t 40 ms
p
(2) Pulse test: t = 8/20 μs acc. IEC 61000-4-5
p
(3) Contact and air discharge acc. IEC 61000-4-2
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
Axis Title
120
10000
10000
100
Rise time = 0.7 ns to 1 ns
8 µs to 100 %
100
80
1000
40
20 µs to 50 %
40
100
27
100
20
20
0
0
10
-10 0
20557
60
1st line
2nd line
53
2nd line
IPPM (%)
60
2nd line
1000
1st line
2nd line
2nd line
IESD (%)
80
t (ns)
2nd line
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 / 150 pF)
10
0
10 20 30 40 50 60 70 80 90 100
20548
10
20
30
40
t (µs)
2nd line
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Rev. 1.7, 27-May-2020
Document Number: 84830
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
Axis Title
1000
900
1000
1000
100
f = 1 MHz
700
1st line
600
500
400
2nd line
CD (pF)
RthJA = 130 K/W
800
2nd line
P (mW)
10000
10
100
300
200
RthJA = 370 K/W
100
1
0
0
50
100
0
150
TA (°C)
2nd line
22888
10
20
23150
Fig. 3 - Maximum Power Dissipation vs. Ambient Temperature
40
Fig. 6 - Typical Capacitance at VR = 0 V vs. Breakdown Voltage
Axis Title
Axis Title
10000
100
10000
90
PLZ10A
PLZ10B
PLZ10C
PLZ10D
PLZ11A
PLZ11B
PLZ11C
PLZ12A
PLZ12B
PLZ12C
80
100
70
10
60
2nd line
IZ (mA)
1st line
2nd line
1000
50
40
100
1000
1st line
2nd line
1000
2nd line
IF (mA)
30
VZ (V)
2nd line
100
30
1
20
10
0.1
10
0
0.5
1
1.5
0
VF (V)
2nd line
22889
10
8
2
10
Fig. 7 - Breakdown Characteristics
Axis Title
Footprint
in mm
100
80
2nd line
IZ (mA)
1000
infinite heatsink
PLZ13A
PLZ13B
PLZ13C
PLZ15A
PLZ15B
PLZ15C
PLZ16A
PLZ16B
PLZ16C
70
100
60
50
40
1000
1st line
line
1st
2nd line
line
2nd
10
10
100
30
20
10
1
0.001
22890
10000
90
1st line
2nd line
2nd line
Zth - Thermal Impedance (K/W)
Axis Title
10000
10
100
14
VZ (V)
2nd line
22891
Fig. 4 - Typical Forward Current vs. Forward Voltage
1000
12
0.01
0.1
1
10
100
0
10
1000
tp - Pulse Width (s)
2nd line
Fig. 5 - Thermal Impedance vs. Time
10
10
22892
12
14
16
18
VZ (V)
2nd line
Fig. 8 - Breakdown Characteristics
Rev. 1.7, 27-May-2020
Document Number: 84830
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
Axis Title
Axis Title
10000
60
20
20
100
15
10
10
1000
PLZ36A
PLZ36B
PLZ36C
PLZ36D
PLZ39A
PLZ39B
PLZ39C
PLZ39D
1st line
2nd line
30
1000
1st line
2nd line
40
2nd line
IZ (mA)
25
PLZ18A
PLZ18B
PLZ18C
PLZ20A
PLZ20B
PLZ20C
PLZ20D
PLZ22A
PLZ22B
PLZ22C
2nd line
IZ (mA)
50
10000
30
100
5
0
10
14
16
18
20
22
0
VZ (V)
2nd line
22893
10
30
24
22896
Fig. 9 - Breakdown Characteristics
32
34
36
38
40
VZ (V)
2nd line
Fig. 12 - Breakdown Characteristics
Axis Title
50
10000
PLZ24A
PLZ24B
PLZ24C
PLZ24D
PLZ27A
PLZ27B
PLZ27C
PLZ27D
30
20
1000
1st line
2nd line
2nd line
IZ (mA)
40
100
10
0
10
20
22
24
26
28
30
VZ (V)
2nd line
22894
Fig. 10 - Breakdown Characteristics
Axis Title
40
10000
35
PLZ30A
PLZ30B
PLZ30C
PLZ30D
PLZ33A
PLZ33B
PLZ33C
PLZ33D
25
20
15
1000
1st line
2nd
2nd line
line
2nd line
IZ (mA)
30
100
10
5
0
10
25
22895
27
29
31
33
35
VZ (V)
2ndline
line
2nd
Fig. 11 - Breakdown Characteristics
Rev. 1.7, 27-May-2020
Document Number: 84830
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
0.6 ± 0.1
0.5
0.3
1.9 ± 0.1
1.3 ± 0.1
0.15
+ 0.1
0.6 - 0.05
PACKAGE DIMENSIONS in millimeters: MicroSMF (DO-219AC)
cathode bar
2.5 ± 0.1
foot print recommendation
for reflow soldering:
foot print recommendation
for wave soldering:
1.5
4.4
22741
Document no.: S8-V-3910.03-001 (4)
Created - Date: 02.Dec.2010
Rev. 5 - Date: 06.May. 2014
0.9
1.2
0.8
3.1
Rev. 1.7, 27-May-2020
Document Number: 84830
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PLZ Series
www.vishay.com
Vishay Semiconductors
CARRIER TAPE DIMENSIONS in millimeters: MicroSMF (DO-219AC)
A
+0.10
0.00
A
8
0.8 ±0.1
4 ±0.1
AX.
B
5° M
B
+0.3
-0.1
+0.25
0.00
3.5 ±0.05
Ø1
0.229 ±0.02
Min. 6.25
Ø 1.5
4 ±0.1
2.7 ±0.1
2 ±0.05
1.75 ±0.1
A-A Section
B-B Section
1.5 ±0.1
10
°M
AX
.
23166
Document no.: S8-V-3717.02-004 (4)
Created date: 26-Mar-2020
Rev.2: 05.05.2020
Rev. 1.7, 27-May-2020
Document Number: 84830
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000