RS1B-M3/61T

RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Fast switching for high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) DESIGN SUPPORT TOOLS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Models Available PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code RS1A RS1B RS1D RS1G RS1J RS1K RA RB RD RG RJ RK UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V Maximum RMS voltage VRMS 35 70 140 280 420 500 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 Maximum average forward rectified current at TL = 90 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum DC reverse current at rated DC blocking voltage SYMBOL RS1A RS1B RS1D VF TA = 25 °C TA = 125 °C RS1G RS1J RS1K 1.3 V 5.0 IR μA 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 150 Typical junction capacitance 4.0 V, 1 MHz CJ 10 UNIT 250 500 7.0 ns pF Revision: 10-Aug-2018 Document Number: 89402 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance RS1A RS1B RS1D (1) RS1G RS1J RS1K 105 RJL (1) UNIT °C/W 32 Note (1) Thermal resistance from junction-to-ambient and from junction-to-lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RS1J-M3/61T PREFERRED P/N 0.064 61T 1800 7" diameter plastic tape and reel RS1J-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 1.2 Resistive or Inductive Load 1.0 0.8 0.6 0.4 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 0 20 40 60 80 100 120 140 160 Peak Forward Surge Current (A) 1 TJ = 25 °C 0.1 TJ = -40 °C 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 50 TL = 90 °C 8.3 ms Single Half Sine-Wave 40 30 20 10 0 1 TJ = 125 °C 0.4 180 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Instantaneous Reverse Current (ƶA) 0 10 1000 100 TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 TJ = -40 °C 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Revision: 10-Aug-2018 Document Number: 89402 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RS1A, RS1B, RS1D, RS1G, RS1J, RS1K www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 RS1A thru RS1G 10 RS1J thru RS1K 10 Mounted on 0.2" x 0.2" (5 mm x 5 mm) Copper Pad Area 1 0.01 1 1 10 100 0.1 1 10 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 10-Aug-2018 Document Number: 89402 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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