S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
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Vishay Semiconductors
Standard Recovery Rectifier, High Voltage Surface Mount
FEATURES
eSMP® Series
2
1
23020
23019
SMF (DO-219AB)
•
•
•
•
•
For surface mounted applications
Low profile package
Ideal for automated placement
Glass passivated
High temperature soldering: 260 °C / 10 s at
terminals
• Wave and reflow solderable
• Compatible to SOD-123W package case outline
or SOD-123F and SOD-123FL
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
Case: SMF (DO-219AB)
Polarity: band denotes cathode end
Weight: approx. 15 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), MOQ = 50K
08/3K per 7" reel (8 mm tape), MOQ = 30K
Circuit configuration: single
PARTS TABLE
PART
S1FLB-M
S1FLD-M
S1FLG-M
S1FLJ-M
S1FLK-M
S1FLM-M
ORDERING CODE
S1FLB-M-18 or S1FLB-M-08
S1FLD-M-18 or S1FLD-M-08
S1FLG-M-18 or S1FLG-M-08
S1FLJ-M-18 or S1FLJ-M-08
S1FLK-M-18 or S1FLK-M-08
S1FLM-M-18 or S1FLM-M-08
MARKING
HB
HD
HG
HJ
HK
HM
REMARKS
Tape and reel
Tape and reel
Tape and reel
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
S1FLB-M
VRRM
100
V
S1FLD-M
VRRM
200
V
S1FLG-M
VRRM
400
V
S1FLJ-M
VRRM
600
V
S1FLK-M
VRRM
800
V
S1FLM-M
VRRM
1000
V
S1FLB-M
VRMS
70
V
S1FLD-M
VRMS
140
V
S1FLG-M
VRMS
280
V
S1FLJ-M
VRMS
420
V
S1FLK-M
VRMS
560
V
S1FLM-M
VRMS
700
V
Rev.1.5, 26-Feb-2021
Document Number: 82453
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Maximum DC blocking voltage
Maximum average forward rectified current
PART
SYMBOL
VALUE
UNIT
S1FLB-M
VDC
100
V
S1FLD-M
VDC
200
V
S1FLG-M
VDC
400
V
S1FLJ-M
VDC
600
V
S1FLK-M
VDC
800
V
S1FLM-M
VDC
1000
V
TL = 75 °C (1)
IF(AV)
1.5
A
TA = 25 °C (1) at RthJA < 110 K/W
IF(AV)
1
A
TA = 65 °C (1)
IF(AV)
0.7
A
TL = 25 °C
IFSM
22
A
Peak forward surge current 8.3 ms half sine-wave
Note
(1) Averaged over any 20 ms period
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
RthJA
180
K/W
Tj, Tstg
-55 to +150
°C
Note
(1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads (≥ 40 μm thick)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Instantaneous forward voltage
TEST CONDITION
1 A (1)
TA = 25 °C
Maximum DC reverse current at rated
DC blocking voltage
TA = 125 °C
PART
SYMBOL
MAX.
UNIT
S1FLB-M
VF
MIN.
TYP.
1.1
V
S1FLD-M
VF
1.1
V
S1FLG-M
VF
1.1
V
S1FLJ-M
VF
1.1
V
S1FLK-M
VF
1.1
V
S1FLM-M
VF
1.1
V
S1FLB-M
IR
10
μA
S1FLD-M
IR
10
μA
S1FLG-M
IR
10
μA
S1FLJ-M
IR
10
μA
S1FLK-M
IR
10
μA
S1FLM-M
IR
10
μA
S1FLB-M
IR
50
μA
S1FLD-M
IR
50
μA
S1FLG-M
IR
50
μA
S1FLJ-M
IR
50
μA
S1FLK-M
IR
50
μA
S1FLM-M
IR
50
μA
Rev.1.5, 26-Feb-2021
Document Number: 82453
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse recovery time
TEST CONDITION
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
Typical capacitance
4 V, 1 MHz
PART
SYMBOL
MAX.
UNIT
S1FLB-M
trr
MIN.
TYP.
1800
ns
S1FLD-M
trr
1800
ns
S1FLG-M
trr
1800
ns
S1FLJ-M
trr
1800
ns
S1FLK-M
trr
1800
ns
S1FLM-M
trr
1800
S1FLB-M
Cj
4
pF
ns
S1FLD-M
Cj
4
pF
S1FLG-M
Cj
4
pF
S1FLJ-M
Cj
4
pF
S1FLK-M
Cj
4
pF
S1FLM-M
Cj
4
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Rev.1.5, 26-Feb-2021
Document Number: 82453
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
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Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
Instantaneous Reverse Current (µA)
1.2
Resistive or inductive load
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
3.0 mm x 3.0 mm 40 µm
thick copper pad areas
20
40
60
80
100
120
140
TJ = 75 °C
TJ = 25 °C
0
100
200
300
400
500
600
700
800
900
Instantaneous Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Reverse Characteristics
10
1000
9
8
7
TJ = 150 °C
C (pF)
TJ = 25 °C
TJ = 100 °C
6
5
4
3
2
1
0
100
600
17376
TJ = 50 °C
0.1
17377
Fig. 1 - Forward Current Derating Curve
Instantaneous Forward Current (mA)
TJ = 100 °C
1
160
Ambient Temperature (°C)
17375
TJ = 125 °C
0.01
0
0
TJ = 150 °C
10
700
800
900
1000
0
1100
Instantaneous Forward Voltage (mV)
Fig. 2 - Typical Instantaneous Forward Characteristics
17378
5
10
15
20
25
30
35
40
VR (V)
Fig. 4 - Capacitance vs. Reverse Voltage
Rev.1.5, 26-Feb-2021
Document Number: 82453
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
0.85 [0.033]
0.35 [0.014]
0.1 [0.004]
0 [0.000]
5°
5°
1.2 [0.047]
1.7 [0.067]
1.9 [0.075]
0.8 [0.031]
Detail Z
enlarged
0.1 [0.004]
0.25 [0.010]
1.8 [0.071] min.
1.08 [0.043]
0.88 [0.035]
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
foot print recommendation:
Reflow soldering
1.3 [0.051]
1.4 [0.055]
1.3 [0.051]
2.9 [0.114]
Created - Date: 15. February 2005
Rev. 6 - Date: 24.Feb.2021
Document no.: S8-V-3915.01-001 (4)
22989
Rev.1.5, 26-Feb-2021
Document Number: 82453
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1FLB-M, S1FLD-M, S1FLG-M, S1FLJ-M, S1FLK-M, S1FLM-M
www.vishay.com
Vishay Semiconductors
ORIENTATION IN CARRIER TAPE - SMF (DO-219AB)
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev.1.5, 26-Feb-2021
Document Number: 82453
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000