S2A-E3/5BT

S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB) • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM 1.5 A TYPICAL APPLICATIONS 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 50 A IR 1.0 μA VF 1.15 V TJ max. 150 °C Package DO-214AA (SMB) Diode variations Single die For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code S2A S2B S2D S2G S2J S2K S2M SA SB SD SG SJ SK SM UNIT Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 Max. average forward rectified current at TL= 100 °C IF(AV) 1.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 °C Operating and storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Max. instantaneous forward voltage 1.5 A Max. DC reverse current at rated DC blocking voltage SYMBOL VF TA = 25 °C TA = 125 °C IR S2A S2B S2D S2G 1.15 1.0 125 S2J S2K S2M UNIT V μA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 16 pF Revision: 14-Aug-13 Document Number: 88712 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) S2A S2B S2D S2G RJA 53 RJL 16 S2J S2K S2M UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.096 52T 750 7" diameter plastic tape and reel S2J-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel S2JHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel S2JHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel S2J-E3/52T Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.75 10 Instantaneous Forward Current (A) Average Forward Current (A) Resistive or Inductive Load 1.50 1.25 1.00 0.75 60 Hz Resistive or Inductive Load P.C.B. Mounted 0.27" x 0.27" (7.0 mm x 7.0 mm) Copper Pad Areas 0.50 0.25 70 90 110 130 150 TJ = 25 °C 0.1 0.5 0.7 0.9 1.1 1.3 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 50 1000 TL = 100 °C 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) TJ = 125 °C 1 0.01 0.3 0 50 TJ = 150 °C 40 30 20 10 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 1 10 100 0 20 40 60 80 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Revision: 14-Aug-13 100 Document Number: 88712 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 1 0.1 1 10 100 10 1 0.01 0.1 10 1 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 14-Aug-13 Document Number: 88712 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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