S4PDHM3_A/H

S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Glass passivated pellet chip junction • Low forward voltage drop 1 • High surge capability • Meets MSL level 1, per LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SMPC (TO-277A) K Anode 1 Cathode Anode 2 DESIGN SUPPORT TOOLS J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS click logo to get started For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive, and telecommunication. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 100 A IR 10 μA VF at IF = 4 A 0.860 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code S4PB S4PD S4PG S4PJ S4PK S4PM S4PB S4PD S4PG S4PJ S4PK S4PM 100 200 400 600 800 1000 UNIT Max. repetitive peak reverse voltage VRRM Average forward current IF(AV) 4.0 A Peak forward surge current 10 ms single half sine-wave  superimposed on rated load IFSM 100 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V Revision: 13-Aug-18 Document Number: 89032 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.0 A IF = 4.0 A Instantaneous forward voltage IF = 2.0 A IF = 4.0 A SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C Reverse current Rated VR Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance 4.0 V, 1 MHz TA = 125 °C TYP. MAX. 0.897 - 0.958 1.10 0.783 - 0.860 0.95 UNIT V - 10 55 100 trr 2.5 - μs CJ 30 - pF IR (2) μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL RJA Typical thermal resistance S4PB S4PD (1) S4PG S4PJ 60 RJL 4 S4PK S4PM UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel S4PJ-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel S4PJHM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6500 13" diameter plastic tape and reel S4PJ-M3/86A S4PJHM3_A/I (1) Note AEC-Q101 qualified (1) Revision: 13-Aug-18 Document Number: 89032 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) 5.0 Resistive or Inductive Load 4.5 4.0 3.5 3.0 2.5 2.0 1.5 TL measured at the Cathode Band Terminal 1.0 0.5 0 0 25 50 75 100 125 150 1000 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 TJ = -40 °C 0.0001 10 175 Lead Temperature (°C) 4.0 D = 0.1 3.5 60 70 80 90 100 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.5 D = 0.2 D = 1.0 3.0 2.5 2.0 T 1.5 1.0 D = tp/T 0.5 tp 0 10 0 1 2 3 4 5 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 50 Junction Capacitance (pF) Average Power Loss (W) D = 0.3 40 Percent of Rated Peak Reverse Voltage (%) D = 0.8 4.5 30 Fig. 4 - Typical Reverse Leakage Characteristics Fig. 1 - Maximum Forward Current Derating Curve 5.0 20 TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C 0.1 TJ = -40 °C 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 13-Aug-18 Document Number: 89032 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 13-Aug-18 Document Number: 89032 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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