S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMC (DO-214AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
TYPICAL APPLICATIONS
5.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
100 A
IR
10 μA
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
VF
1.15 V
MECHANICAL DATA
TJ max.
150 °C
Package
SMC (DO-214AB)
Circuit configuration
Single
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
S5A
S5B
S5D
S5G
S5J
S5K
S5M
5A
5B
5D
5G
5J
5K
5M
UNIT
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Max. RMS voltage
VRMS
35
70
140
280
420
560
700
V
Max. DC blocking voltage
VDC
50
100
200
400
600
800
1000
Max. average forward rectified current at TL = 75 °C
IF(AV)
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
V
Revision: 31-Jul-2018
Document Number: 89921
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Max. instantaneous
forward voltage
5.0 A
SYMBOL
S5B
S5D
VF
TA = 25 °C
Max. DC reverse current at rated
DC blocking voltage
S5A
S5J
S5K
S5M
1.15
UNIT
V
10
IR
TA = 125 °C
S5G
μA
250
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.5
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
40
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
SYMBOL
PARAMETER
Typical thermal resistance
(1)
S5A
S5B
S5D
S5G
RJL
S5J
S5K
S5M
10
UNIT
°C/W
Note
(1) Thermal resistance from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S5J-M3/57T
PREFERRED P/N
0.211
57T
850
7" diameter plastic tape and reel
S5J-M3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
Peak Forward Surge Current (A)
Average Forward Current (A)
6
5
4
3
2
1
TL = 75 °C
8.3 ms Single Half Sine-Wave
100
10
0
0
25
50
75
100
125
150
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Revision: 31-Jul-2018
Document Number: 89921
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3
www.vishay.com
Vishay General Semiconductor
100
10
TJ = 150 °C
1
TJ = 25 °C
TJ = 125 °C
0.1
TJ = -40 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
1.4
0.1
1
Instantaneous Forward Voltage (V)
Instantaneous Reverse Current (μA)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
TJ = -40 °C
0.001
0
20
40
60
80
10
100
Reverse Voltage (V)
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.01)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 31-Jul-2018
Document Number: 89921
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000