SA2B, SA2D, SA2G, SA2J, SA2K, SA2M
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Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
Available
• Low leakage current
• High forward surge capability
SMA (DO-214AC)
Cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
3D 3D
TYPICAL APPLICATIONS
3D Models
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2.0 A
VRRM
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
55 A
IR
3.0 μA
VF at IF = 2.0 A
0.854 V
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SA2B
SA2D
SA2G
SA2J
SA2K
SA2M
2B
2D
2G
2J
2K
2M
100
200
400
600
800
1000
Device marking code
UNIT
Max. repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
55
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1.0 A
Instantaneous forward voltage
IF = 2.0 A
IF = 1.0 A
IF = 2.0 A
SYMBOL
TJ = 25 °C
VF (1)
TJ = 125 °C
TJ = 25 °C
IR (2)
TYP.
MAX.
0.911
-
0.954
1.1
0.805
-
0.854
0.95
0.19
3
28
90
UNIT
V
Reverse current
Rated VR
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.5
-
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
11
-
pF
TJ = 125 °C
μA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 05-Feb-2020
Document Number: 88969
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA2B, SA2D, SA2G, SA2J, SA2K, SA2M
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
SA2B
SA2D
SA2G
SA2J
RθJA (1)
80
RθJL (1)
12
SA2K
SA2M
UNIT
°C/W
Note
(1) Thermal resistance from junction-to-ambient and from junction-to-lead, PCB mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.064
61T
1800
7" diameter plastic tape and reel
SA2J-E3/61T
SA2J-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SA2J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
SA2J-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
3.0
Resistive or Inductive Load
2.5
Lead Temperature
2.0
1.5
1.0
Ambient Temperature
0.5
P.C.B. Mounted on
0.79" x 0.79" (20 mm x 20 mm)
Copper Pad Areas
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
0
0
25
50
75
100
125
150
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
D = 0.5
D = 0.8
D = 0.3
2.0
D = 0.2
D = 1.0
D = 0.1
1.5
1.0
T
0.5
D = tp/T
tp
0
0
0.5
1.0
1.5
2.0
2.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Instantaneous Reverse Current (ƶA)
Lead Temperature (°C)
2.5
Average Power Loss (W)
0.5
175
1000
TJ = 150 °C
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
TJ = -40 °C
0.0001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Revision: 05-Feb-2020
Document Number: 88969
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA2B, SA2D, SA2G, SA2J, SA2K, SA2M
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100
10
1
0.1
1
10
Junction to Ambient
10
1
0.01
100
0.1
1
10
100
1000
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 05-Feb-2020
Document Number: 88969
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000