SA2K-E3/5AT

SA2B, SA2D, SA2G, SA2J, SA2K, SA2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop Available • Low leakage current • High forward surge capability SMA (DO-214AC) Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2.0 A VRRM 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 55 A IR 3.0 μA VF at IF = 2.0 A 0.854 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SA2B SA2D SA2G SA2J SA2K SA2M 2B 2D 2G 2J 2K 2M 100 200 400 600 800 1000 Device marking code UNIT Max. repetitive peak reverse voltage VRRM Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 55 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Instantaneous forward voltage IF = 2.0 A IF = 1.0 A IF = 2.0 A SYMBOL TJ = 25 °C VF (1) TJ = 125 °C TJ = 25 °C IR (2) TYP. MAX. 0.911 - 0.954 1.1 0.805 - 0.854 0.95 0.19 3 28 90 UNIT V Reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.5 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 11 - pF TJ = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Revision: 05-Feb-2020 Document Number: 88969 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SA2B, SA2D, SA2G, SA2J, SA2K, SA2M www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SA2B SA2D SA2G SA2J RθJA (1) 80 RθJL (1) 12 SA2K SA2M UNIT °C/W Note (1) Thermal resistance from junction-to-ambient and from junction-to-lead, PCB mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 61T 1800 7" diameter plastic tape and reel SA2J-E3/61T SA2J-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel SA2J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel SA2J-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 3.0 Resistive or Inductive Load 2.5 Lead Temperature 2.0 1.5 1.0 Ambient Temperature 0.5 P.C.B. Mounted on 0.79" x 0.79" (20 mm x 20 mm) Copper Pad Areas TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C 0.1 0 0 25 50 75 100 125 150 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Fig. 1 - Max. Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics D = 0.5 D = 0.8 D = 0.3 2.0 D = 0.2 D = 1.0 D = 0.1 1.5 1.0 T 0.5 D = tp/T tp 0 0 0.5 1.0 1.5 2.0 2.5 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Instantaneous Reverse Current (ƶA) Lead Temperature (°C) 2.5 Average Power Loss (W) 0.5 175 1000 TJ = 150 °C 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 TJ = -40 °C 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Revision: 05-Feb-2020 Document Number: 88969 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SA2B, SA2D, SA2G, SA2J, SA2K, SA2M www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 1 0.1 1 10 Junction to Ambient 10 1 0.01 100 0.1 1 10 100 1000 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 05-Feb-2020 Document Number: 88969 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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