SB110, SB120, SB130, SB140, SB150, SB160
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Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
FEATURES
•
•
•
•
•
•
•
•
DO-41 (DO-204AL)
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
10 V, 20 V, 30 V, 40 V, 50 V, 60 V
IFSM
50 A
VF
0.48 V, 0.65 V
TJ max.
125 °C, 150 °C
Package
DO-41 (DO-204AL)
Circuit configuration
Single
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-41 (DO-204AL)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB110
SB120
SB130
SB140
SB150
SB160
UNIT
Maximum repetitive peak reverse voltage
VRRM
10
20
30
40
50
60
V
Maximum RMS voltage
VRMS
7
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
10
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dV/dt
Operating junction temperature range
10 000
TJ
Storage temperature range
V/μs
-65 to + 125
TSTG
-65 to + 150
-65 to + 150
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum instantaneous reverse
current at rated DC blocking voltage
TEST CONDITIONS
SYMBOL
VF (1)
1.0 A
TA = 25 °C
TA = 100 °C
IR (1)
SB110
SB120
SB130
SB140
0.48
SB150
SB160
0.65
0.50
10
5.0
UNIT
V
mA
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 05-May-17
Document Number: 88715
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SB110, SB120, SB130, SB140, SB150, SB160
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
SB110
SB120
SB130
SB140
RJA (1)
50
RJL (1)
15
SB150
SB160
UNIT
°C/W
Note
(1) Thermal resistance junction to lead PCB mounted 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB140-E3/54
0.35
54
5500
13" diameter paper tape and reel
SB140-E3/73
0.35
73
3000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
100
Instantaneous Forward Current (A)
Average Forward Current (A)
SB150 and SB160
0.75
SB110 to SB140
0.5
0.25
Resistive or inductive load
0.375" (9.5 mm) lead length
10
TJ = 150 °C
Pulse width = 300 μs
1 % duty cycle
1
TJ = 25 °C
0.1
SB110 to SB140
SB150 to SB160
0.01
0
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
100
50
TJ = TJ max.
8.3 ms single half sine-wave
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
TJ = 125 °C
40
30
20
10
SB110 to SB140
SB150 to SB160
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
1
10
100
0
20
40
60
80
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
100
Revision: 05-May-17
Document Number: 88715
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SB110, SB120, SB130, SB140, SB150, SB160
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
100
SB110 to SB140
SB150 to SB160
1
10
1
0.1
0.01
10
0.1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-41 (DO-204AL)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Revision: 05-May-17
Document Number: 88715
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 09-Jul-2021
1
Document Number: 91000
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