SB2D-M3/5BT

SB2D, SB2G, SB2J, SB2K, SB2M www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer and telecommunication. 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 55 A IR 1.0 μA VF at IF = 2.0 A 0.86 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configuration Single Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: natte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SB2D SB2G SB2J SB2K SB2M B2D B2G B2J B2K B2M 200 400 600 800 1000 UNIT Maximum repetitive peak reverse voltage VRRM Maximum DC forward current (fig. 1) IF (1) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 55 A TJ, TSTG -55 to +150 °C Operating and storage temperature range V Note (1) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB Revision: 20-Feb-2020 Document Number: 89461 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SB2D, SB2G, SB2J, SB2K, SB2M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A TA = 25 °C IF = 2.0 A Instantaneous forward voltage SYMBOL VF (1) IF = 1.0 A TA = 125 °C IF = 2.0 A TA = 25 °C IR (2) TYP. MAX. 0.90 - 0.96 1.15 0.78 - 0.86 1.05 0.15 1.0 36 125 UNIT V Reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance Rated VR = 4.0 V, 1 MHz CJ 16 pF TA = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width, ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SB2D SB2G SB2J RθJA (1) 70 RθJM (1) 10 SB2K SB2M UNIT °C/W Note (1) Units mounted on PCB with 8.0 mm x 8.0 mm copper pad areas, 1 oz. FR4 PCB; R θJA - junction-to-ambient RθJM - junction-to-mount ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB2J-M3/52T PREFERRED P/N 0.096 52T 750 7" diameter plastic tape and reel SB2J-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.4 2.2 D = 0.5 1.8 Averrage Power Loss (W) DC Forward Current (A) 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 2.0 1.6 D = 0.8 D = 0.3 D = 0.2 D = 0.1 D = 1.0 1.2 0.8 0.4 0.2 0 0.1 0 25 50 75 100 125 150 175 Ambient Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Revision: 20-Feb-2020 Document Number: 89461 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SB2D, SB2G, SB2J, SB2K, SB2M www.vishay.com Vishay General Semiconductor Axis Title 100 TJ = 150 °C 1000 TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C 100 TJ = -40 °C 0.1 Junction Capacitance (pF) 10000 1st line 2nd line 2nd line Instantaneous Forward Current (A) 10 10 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 25 °C f = 1.0 MHz VSTG = 50 mVp-p 10 1 1.3 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance TJ = 150 °C 100 TJ = 125 °C 10 1000 TJ = 75 °C 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) 10000 1 TJ = 25 °C 0.1 100 0.01 TJ = -40 °C 0.001 0.0001 10 10 20 30 40 50 60 70 80 90 100 Transient Thermal Impedance (°C/W) Axis Title 1000 100 10 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 20-Feb-2020 Document Number: 89461 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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