SB5H100/4

SB5H90, SB5H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Plastic Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-201AD • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 90 V, 100 V IFSM 200 A VF 0.70 V IR 200 μA TJ max. 175 °C Package DO-201AD Diode variations Single For use in middle voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB5H90 SB5H100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at TC = 80 °C IF(AV) 5.0 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A V Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Storage temperature range TSTG - 55 to + 175 °C TJ 175 °C Maximum operating junction temperature Revision: 20-Jan-14 Document Number: 88722 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SB5H90, SB5H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A Maximum instantaneous forward voltage SYMBOL TA = 25 °C SB5H100 V 0.70 IR (2) TA = 125 °C UNIT 0.80 VF (1) TA = 125 °C TA = 25 °C Maximum reverse current at rated VR SB5H90 200 μA 10 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Maximum thermal resistance SB5H90 (1) SB5H100 25 RJL (1) UNIT °C/W 8 Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PPREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB5H100-E3/54 1.1 54 1400 13" diameter paper tape and reel SB5H100-E3/73 1.1 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 240 Peak Forward Surge Current (A) Average Forward Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 200 160 120 80 40 0 0 25 50 75 100 125 150 175 200 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 20-Jan-14 Document Number: 88722 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SB5H90, SB5H100 www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1 0.1 0 0.1 10 1 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Transient Thermal Impedance 10 000 10 000 1000 Junction Capacitance (pF) Instantaneous Reverse Current (μA) 10 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 0.1 1000 100 TJ = 25 °C 10 0.01 20 40 60 80 0.1 100 1 10 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 20-Jan-14 Document Number: 88722 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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