SBL3030PT-E3/45

SBL3030PT, SBL3040PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 • High frequency operation 1 TO-3P (TO-247AD) PIN 1 PIN 2 PIN 3 CASE • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 30 V, 40 V For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. IFSM 275 A VF 0.55 V TJ max. 125 °C Package TO-3P (TO-247AD) Circuit configuration Common cathode MECHANICAL DATA Case: TO-3P (TO-247AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SBL3030PT SBL3040PT UNIT Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum RMS voltage VRWM 21 28 V Maximum DC blocking voltage VDC 30 Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 275 A Operating junction and storage temperature range TJ, TSTG -40 to +125 °C 40 V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode VF (1) Maximum instantaneous reverse current at rated DC blocking voltage per diode IR (1) TEST CONDITIONS 15 A SBL3030PT SBL3040PT UNIT 0.55 V TC = 25 °C 1.0 mA TC = 100 °C 75 mA Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 27-May-2020 Document Number: 88732 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBL3030PT, SBL3040PT www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Thermal resistance, junction to case per diode SBL3030PT SBL3040PT RJC UNIT 1.5 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD SBL3030PT-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 Instantaneous Forward Current (A) 100 Average Forward Current (A) Resistive or Inductive Load 24 18 12 6 Pulse Width = 300 µs 1 % Duty Cycle 10 1 TJ = 25 °C 0.1 0.01 0 0 100 50 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 300 100 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = 125 °C TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 200 150 100 50 TJ = 125 °C 10 TJ = 75 °C 1 0.1 TJ = 25 °C 0.01 0 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 27-May-2020 Document Number: 88732 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBL3030PT, SBL3040PT www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 1000 10 1 100 0.1 1 0.1 0.01 100 10 1 0.1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3P (TO-247AD) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Revision: 27-May-2020 Document Number: 88732 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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