SBL4030PT, SBL4040PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
3
• High forward surge capability
2
• High frequency operation
1
TO-3P (TO-247AD)
PIN 1
PIN 2
PIN 3
CASE
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
IF(AV)
40 A
VRRM
30 V, 40 V
IFSM
400 A
MECHANICAL DATA
VF
0.50 V
Case: TO-3P (TO-247AD)
TJ max.
125 °C
Package
TO-3P (TO-247AD)
Circuit configuration
Common cathode
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL4030PT
SBL4040PT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum working peak reverse voltage
VRWM
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified current at TC = 100 °C
IF(AV)
40
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
400
A
Peak repetitive reverse surge current per diode (1)
IRRM
2.0
A
Voltage rate of change at (rated VR)
dV/dt
1000
V/μs
TJ, TSTG
-40 to +125
°C
Operating junction storage temperature range
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode (1)
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
TEST CONDITIONS
IF = 20 A
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 25 °C
TC = 100 °C
TC = 100 °C
SYMBOL
VF
SBL4030PT
SBL4040PT
0.58
0.50
UNIT
V
10
IR
mA
100
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 27-May-2020
Document Number: 88733
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL4030PT, SBL4040PT
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Thermal resistance from junction to case per diode
SBL4030PT
RJC
SBL4040PT
UNIT
1.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
SBL4030PT-E3/45
6.13
45
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Current (A)
50
40
30
20
10
0
TJ = 100 °C
10
TJ = 25 °C
1
0.1
0.01
0
100
50
150
0
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 1 - Forward Current Derating Curve
400
100
Instantaneous Reverse Current (mA)
Forward Surge Current (A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
300
200
100
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 27-May-2020
Document Number: 88733
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL4030PT, SBL4040PT
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
1000
100
0.1
1
10
10
1
0.1
0.01
100
0.1
1
10
100
t - Pulse Duration (s)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3P (TO-247AD)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
Revision: 27-May-2020
Document Number: 88733
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2023
1
Document Number: 91000