SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200
www.vishay.com
Vishay General Semiconductor
Soft Recovery Ultrafast Plastic Rectifier
FEATURES
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
DO-15 (DO-204AC)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
IF(AV)
2.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
50 A
MECHANICAL DATA
trr
15 ns
VF
0.88 V
Case: DO-15 (DO-204AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
TJ max.
150 °C
Package
DO-15 (DO-204AC)
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBYV27-50
SBYV27-100
SBYV27-150
SBYV27-200
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Minimum reverse breakdown voltage at 100 μA
VBR
55
110
165
220
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 85 °C
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
50
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 29-Apr-2020
Document Number: 88736
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
TEST CONDITIONS
TJ = 25 °C
3.0 A
SYMBOL
SBYV27-50
SBYV27-100
SBYV27-200 UNIT
1.07
VF (1)
V
TJ = 150 °C
0.88
TA = 25 °C
Maximum DC reverse
current at rated DC
blocking voltage
SBYV27-150
5.0
IR
μA
TA = 100 °C
200
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
15
ns
Typical junction
capacitance
4.0 V, 1 MHz
CJ
15
pF
Note
(1) Pulse test: 300 μs pulse width, duty cycle ≤ 2 %
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBYV27-50
SBYV27-100
RθJA (1)
Typical thermal resistance
SBYV27-150
SBYV27-200 UNIT
45
°C/W
Note
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SBYV27-200-E3/54
0.404
54
4000
13" diameter paper tape and reel
SBYV27-200-E3/73
0.404
73
2000
Ammo pack packaging
Revision: 29-Apr-2020
Document Number: 88736
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
2.5
Instantaneous Reverse Leakage
Current (μA)
Average Forward Rectified Current (A)
3.0
2.0
1.5
1.0
TA, Ambient Temperature
P.C.B. Mounted
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
0.5
TJ = 150 °C
TJ = 125 °C
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0
0
25
50
100
75
125
150
0
175
20
40
60
80
100
Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curves
Fig. 4 - Typical Reverse Leakage Characteristics
TJ = 150 °C
10 ms Single Half Sine-Wave
50
40
30
20
10
60
Recovered Store Change/Reverse
Recovery Time, nC/ns
60
Peak Forward Surge Current (A)
1000
0
IF = 2.0 A
VR = 30 V
50
dI/dt = 150 A/μs
dI/dt = 100 A/μs
40
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 50 A/μs
30
20
dI/dt = 20 A/μs
10
trr
Qrr
0
100
10
1
0
25
50
75
100
125
150
Number of Cycles at 50 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Reverse Switching Charateristics
10
1
100
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
175
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
Revision: 29-Apr-2020
Document Number: 88736
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBYV27-50, SBYV27-100, SBYV27-150, SBYV27-200
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-15 (DO-204AC)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
Revision: 29-Apr-2020
Document Number: 88736
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
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Document Number: 91000
