SBYV28-50-E3/54

SBYV28-50, SBYV28-100, SBYV28-150, SBYV28-200 www.vishay.com Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • • • • • • • • DO-201AD Glass passivated pellet chip junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.5 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 90 A trr 20 ns VF 0.89 V TJ max. 150 °C Package DO-201AD Circuit configuration Single MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS Maximum DC blocking voltage VDC Minimum reverse breakdown voltage at 100 μA VBR Maximum average forward rectified current 0.375" (9.5 mm) lead lengths at TL = 85 °C IF(AV) 3.5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 90 TJ, TSTG -55 to +150 Operating and storage temperature range 100 150 200 35 70 105 140 50 100 150 200 55 110 165 220 UNIT V A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage TEST CONDITIONS TJ = 25 °C 3.5 A TJ = 150 °C SYMBOL Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance 4.0 V, 1 MHz SBYV28-100 SBYV28-150 SBYV28-200 UNIT 1.1 VF (1) TA = 25 °C Maximum DC reverse current at rated DC blocking voltage SBYV28-50 0.89 V 5.0 TA = 100 °C IR TJ = 25 °C trr 20 ns CJ 20 pF 300 μA Note (1) Pulse test: t = 300 μs pulse, duty cycle  2 % p Revision: 31-Mar-2022 Document Number: 88737 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBYV28-50, SBYV28-100, SBYV28-150, SBYV28-200 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RJA SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 (1) UNIT 25 °C/W Note (1) Lead length = 3/8" on PCB with 1.5" x 1.5" (38.1 mm x 38.1 mm) copper surface ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SBYV28-200-E3/54 1.138 54 1400 13" diameter paper tape and reel SBYV28-200-E3/73 1.138 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature 5.0 4.0 3.0 2.0 TA, Ambient Temperature P.C.B. Mounted 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 1.0 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 6.0 0 0 25 50 75 100 125 150 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 0.1 0.01 0.4 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curves Fig. 3 - Typical Instantaneous Forward Characteristics 1000 90 TJ = 175 °C 10 ms Single Half Sine-Wave 80 Instantaneous Reverse Leakage Current (μA) Peak Forward Surge Current (A) TJ = 100 °C 70 60 50 40 30 100 TJ = 100 °C 10 TJ = 25 °C 1 0.1 0.01 20 1 10 100 0 20 40 60 80 100 Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Leakage Characteristics Revision: 31-Mar-2022 Document Number: 88737 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBYV28-50, SBYV28-100, SBYV28-150, SBYV28-200 www.vishay.com 100 dI/dt = 150 A/μs IF = 4.0 A VR = 30 V 50 Junction Capacitance (pF) Recovered Store Change/Reverse Recovery Time, nC/ns 60 Vishay General Semiconductor dI/dt = 100 A/μs dI/dt = 20 A/μs dI/dt = 50 A/μs 40 dI/dt = 100 A/μs dI/dt = 150 A/μs dI/dt = 50 A/μs dI/dt = 20 A/μs 30 20 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 trr Qrr 0 1 0 25 50 75 100 125 150 175 0.1 1 10 Junction Temperature (°C) Reverse Voltage (V) Fig. 5 - Reverse Switching Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 31-Mar-2022 Document Number: 88737 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000