SD101A, SD101B, SD101C
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• Integrated
discharge
protection
ring
against
static
• Low capacitance
• Low leakage current
• Low forward voltage drop
• AEC-Q101 qualified
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
APPLICATIONS
• HF-detector
• Protection circuit
Models
Available
• Diode for low currents with a low supply voltage
MECHANICAL DATA
• Small battery charger
Case: DO-35 (DO-204AH)
• Power supplies
Weight: approx. 125 mg
• DC/DC converter for notebooks
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
TYPE DIFFERENTATION
ORDERING CODE
CIRCUIT
CONFIGURATION
TYPE MARKING
REMARKS
SD101A
VR = 60 V, VF max. 410 mV
at IF = 1 mA
SD101A-TR or
SD101A-TAP
Single
SD101A
Tape and reel/
ammopack
SD101B
VR = 50 V, VF max. 400 mV
at IF = 1 mA
SD101B-TR or
SD101B-TAP
Single
SD101B
Tape and reel/
ammopack
SD101C
VR = 40 V, VF max. 390 mV
at IF = 1 mA
SD101C-TR or
SD101C-TAP
Single
SD101C
Tape and reel/
ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
PART
SYMBOL
VALUE
UNIT
SD101A
VR
60
V
SD101B
VR
50
V
SD101C
VR
40
V
IF
30
mA
IFSM
2
A
IFRM
150
mA
Ptot
310
mW
SYMBOL
VALUE
UNIT
Tj
125
°C
Tstg
-65 to +150
°C
RthJA
320
K/W
Forward continuous current
Peak forward surge current
tp = 10 μs
Repetitive peak forward current
Power dissipation
(1)
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Junction temperature
Storage temperature range
Thermal resistance junction to ambient air (1)
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.8, 01-Jun-17
Document Number: 85629
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101A, SD101B, SD101C
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
IR = 10 μA
MIN.
V(BR)
60
TYP.
MAX.
UNIT
V
V
SD101B
V(BR)
50
V(BR)
40
SD101A
IR
200
nA
VR = 40 V
SD101B
IR
200
nA
VR = 30 V
SD101C
IR
200
nA
SD101A
VF
410
mV
IF = 1 mA
Forward voltage drop
IF = 15 mA
Diode capacitance
SYMBOL
SD101C
VR = 50 V
Leakage current
PART
SD101A
VR = 0 V, f = 1 MHz
V
SD101B
VF
400
mV
SD101C
VF
390
mV
SD101A
VF
1000
mV
SD101B
VF
950
mV
SD101C
VF
900
mV
SD101A
CD
2.0
pF
SD101B
CD
2.1
pF
SD101C
CD
2.2
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10.00
Tj = 125 °C
10
Tj = 100 °C
Tj = 75 °C
1
Tj = 50 °C
0.1
Tj = 25 °C
IF - Forward Current (mA)
IR - Reverse Current (μA)
100
1.00
0.10
0.01
0.01
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
16204
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
50
16206
Fig. 1 - Reverse Current vs. Reverse Voltage
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
CD - Diode Capacitance (pF)
2.0
Tj = 25 °C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16205
5
10
15
20
25
30
35
40
45
50
VR - Reverse Voltage (V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage
Rev. 1.8, 01-Jun-17
Document Number: 85629
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101A, SD101B, SD101C
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.8, 01-Jun-17
Document Number: 85629
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 09-Jul-2021
1
Document Number: 91000