SD101AW, SD101BW, SD101CW
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATRUES
• For general purpose applications
• The low forward voltage drop and fast
switching make it ideal for protection of MOS
devices, steering, biasing and coupling diodes
for fast switching and low logic level
applications
DESIGN SUPPORT TOOLS
• The SD101 series is a metal-on-silicon
Schottky barrier device which is protected by a
PN junction guardring
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• AEC-Q101 qualified available
Models
• Base P/N-E3 - RoHS-compliant, commercial grade
Available
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
MECHANICAL DATA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
SD101AW
SD101BW
SD101CW
ORDERING CODE
SD101AW-E3-08 or SD101AW-E3-18
SD101AW-HE3-08 or SD101AW-HE3-18
SD101BW-E3-08 or SD101BW-E3-18
SD101BW-HE3-08 or SD101BW-HE3-18
SD101CW-E3-08 or SD101CW-E3-18
SD101CW-HE3-08 or SD101CW-HE3-18
CIRCUIT
CONFIGURATION
TYPE MARKING
Single
SA
Single
SB
Single
SC
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
SD101AW
VRRM
60
V
SD101BW
VRRM
50
V
SD101CW
VRRM
40
V
Ptot
400
mW
IF
30
mA
IFSM
2
A
SYMBOL
VALUE
UNIT
RthJA
300
K/W
Tj
125
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +125
°C
Repetitive peak reverse voltage
Power dissipation (infinite heatsink) (1)
Forward continuous current
Maximum single cycle surge
10 μs square wave
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
Junction temperature (1)
TEST CONDITION
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 23-Feb-18
Document Number: 85679
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101AW, SD101BW, SD101CW
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
IR = 10 μA
60
TYP.
MAX.
UNIT
V
V
V(BR)
50
V(BR)
40
SD101AW
IR
200
nA
VR = 40 V
SD101BW
IR
200
nA
VR = 30 V
SD101CW
IR
200
nA
SD101AW
VF
410
mV
SD101BW
VF
400
mV
SD101CW
VF
390
mV
SD101AW
VF
1000
mV
SD101BW
VF
950
mV
SD101CW
VF
900
mV
SD101AW
CD
2
pF
SD101BW
CD
2.1
pF
SD101CW
CD
2.2
pF
trr
1
ns
Forward voltage drop
IF = 15 mA
VR = 0 V, f = 1 MHz
Reverse recovery time
MIN.
V(BR)
SD101BW
IF = 1 mA
Diode capacitance
SYMBOL
SD101CW
VR = 50 V
Leakage current
PART
SD101AW
IF = IR = 5 mA, recover to 0.1 IR
V
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
A
B
C
1
0.1
0.01
0.2
0.4
0.6
0.8
75 °C
1
50 °C
0.1
25 °C
100
40
20
0.2
0.4
0.6
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
CD - Typical Capacitance (pF)
60
0
10
2.0
A
B
C
80
0
18479
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
I F - Forward Current (mA)
100 °C
1.0
VF - Forward Voltage (V)
18478
10
0.01
0
18477
0
125 °C
I R - Reverse Current (µA)
I F - Forward Current (mA)
10
0.8
VF - Forward Voltage (V)
Fig. 2 - Typical Forward Conduction Curve
1.4
1.2
18480
A
1.0
B
C
0.8
0.6
0.4
0.2
0
1.0
T j = 25 °C
1.8
1.6
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 1.9, 23-Feb-18
Document Number: 85679
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101AW, SD101BW, SD101CW
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.40 (0.055)
3.85 (0.152)
1.7 (0.067)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.9, 23-Feb-18
Document Number: 85679
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
1
Document Number: 91000
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