SD101AW-G, SD101BW-G, SD101CW-G
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Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• For general purpose applications
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guardring
DESIGN SUPPORT TOOLS
click logo to get started
• AEC-Q101 qualified available
(part number on request)
Models
• Base P/N-G3 - green, commercial grade
MECHANICAL DATA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Available
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT
CONFIGURATION
TYPE MARKING
SK
SD101AW-G
SD101AW-G3-08 or SD101AW-G3-18
Single
SD101BW-G
SD101BW-G3-08 or SD101BW-G3-18
Single
SL
SD101CW-G
SD101CW-G3-08 or SD101CW-G3-18
Single
SM
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
PART
SYMBOL
VALUE
UNIT
SD101AW-G
VRRM
60
V
SD101BW-G
VRRM
50
V
SD101CW-G
VRRM
40
V
Ptot
400
mW
IF
30
mA
IFSM
2
A
SYMBOL
VALUE
UNIT
RthJA
300
K/W
Power dissipation (infinite heatsink) (1)
Forward continuous current
Maximum single cycle surge
10 μs square wave
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
(1)
Tj
125
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating ttemperature range
Top
-55 to +125
°C
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.1, 22-Feb-18
Document Number: 85158
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101AW-G, SD101BW-G, SD101CW-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
IR = 10 μA
VR = 50 V
Leakage current
MIN.
V(BR)
60
TYP.
MAX.
UNIT
V
V
SD101BW-G
V(BR)
50
SD101CW-G
V(BR)
40
SD101AW-G
IR
200
nA
nA
V
SD101BW-G
IR
200
VR = 30 V
SD101CW-G
IR
200
nA
SD101AW-G
VF
410
mV
Forward voltage drop
IF = 15 mA
VR = 0 V, f = 1 MHz
Reverse recovery time
SYMBOL
VR = 40 V
IF = 1 mA
Diode capacitance
PART
SD101AW-G
SD101BW-G
VF
400
mV
SD101CW-G
VF
390
mV
SD101AW-G
VF
1000
mV
SD101BW-G
VF
950
mV
SD101CW-G
VF
900
mV
SD101AW-G
CD
2
pF
SD101BW-G
CD
2.1
pF
SD101CW-G
CD
2.2
pF
trr
1
ns
IF = IR = 5 mA, recover to 0.1 IR
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
A
B
C
1
0.1
0.01
0.2
0.4
0.6
0.8
75 °C
1
50 °C
0.1
25 °C
100
40
20
0.2
0.4
0.6
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
CD - Typical Capacitance (pF)
60
0
10
2.0
A
B
C
80
0
18479
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
I F - Forward Current (mA)
100 °C
1.0
VF - Forward Voltage (V)
18478
10
0.01
0
18477
0
125 °C
I R - Reverse Current (µA)
I F - Forward Current (mA)
10
0.8
VF - Forward Voltage (V)
Fig. 2 - Typical Forward Conduction Curve
1.4
1.2
18480
A
1.0
B
C
0.8
0.6
0.4
0.2
0
1.0
T j = 25 °C
1.8
1.6
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 1.1, 22-Feb-18
Document Number: 85158
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101AW-G, SD101BW-G, SD101CW-G
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.40 (0.055)
3.85 (0.152)
1.7 (0.067)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.1, 22-Feb-18
Document Number: 85158
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000