SD101AWS-G, SD101BWS-G, SD101CWS-G
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• For general purpose applications
• The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
DESIGN SUPPORT TOOLS click logo to get started
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
Models
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT
CONFIGURATION
TYPE MARKING
SK
SD101AWS-G
SD101AWS-G3-08 or SD101AWS-G3-18
Single
SD101BWS-G
SD101BWS-G3-08 or SD101BWS-G3-18
Single
SL
SD101CWS-G
SD101CWS-G3-08 or SD101CWS-G3-18
Single
SM
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
SD101AWS-G
VRRM
60
V
SD101BWS-G
VRRM
50
V
SD101CWS-G
VRRM
40
V
Ptot
150
mW
IF
30
mA
IFSM
2
A
SYMBOL
VALUE
UNIT
RthJA
650
K/W
Tj
125
°C
Operating temperature range
Top
-55 to +125
°C
Storage temperature range
Tstg
-65 to +150
°C
Repetitive peak reverse voltage
Power dissipation (infinite heatsink) (1)
Forward continuous current
Maximum single cycle surge
10 μs square wave
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature (1)
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.3, 01-Jun-17
Document Number: 85162
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101AWS-G, SD101BWS-G, SD101CWS-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
IR = 10 μA
MIN.
V(BR)
60
MAX.
UNIT
V
V
V(BR)
50
V(BR)
40
SD101AWS-G
IR
200
nA
VR = 40 V
SD101BWS-G
IR
200
nA
VR = 30 V
SD101CWS-G
IR
200
nA
SD101AWS-G
VF
410
mV
Forward voltage drop
IF = 15 mA
VR = 0 V, f = 1 MHz
V
SD101BWS-G
VF
400
mV
SD101CWS-G
VF
390
mV
SD101AWS-G
VF
1000
mV
SD101BWS-G
VF
950
mV
SD101CWS-G
VF
900
mV
SD101AWS-G
CD
2.0
ns
SD101BWS-G
CD
2.1
ns
SD101CWS-G
CD
2.2
ns
trr
1
ns
IF = IR = 5 mA,
recover to 0.1 IR
Reverse recovery time
TYP.
SD101BWS-G
IF = 1 mA
Junction capacitance
SYMBOL
SD101CWS-G
VR = 50 V
Leakage current
PART
SD101AWS-G
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
A
B
C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
40
20
18478
0
0.2
0.4
0.6
50 °C
0.1
25 °C
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
CD - Typical Capacitance (pF)
I F - Forward Current (mA)
60
0
75 °C
1
2.0
A
B
C
80
100 °C
18479
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
100
10
0.01
1.0
VF - Forward Voltage (V)
18477
125 °C
I R - Reverse Current (µA)
I F - Forward Current (mA)
10
0.8
VF - Forward Voltage (V)
Fig. 2 - Typical Forward Conduction Curve
1.4
1.2
18480
A
1.0
B
C
0.8
0.6
0.4
0.2
0
1.0
T j = 25 °C
1.8
1.6
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 1.3, 01-Jun-17
Document Number: 85162
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD101AWS-G, SD101BWS-G, SD101CWS-G
www.vishay.com
Vishay Semiconductors
0.1 [0.004] max.
0.15 [0.006]
0.10 [0.004]
0.2 [0.008]
0.8 [0.031]
1.15 [0.045]
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0° - 8°
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
2.50 [0.098]
1.1 [0.043]
0.20 [0.008]
0.40 [0.016]
2.85 [0.112]
1.5 [0.059]
1.60 [0.063]
Cathode bar
Footprint recommendation:
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
0.8 [0.031]
0.6 [0.024]
0.8 [0.031]
Rev. 1.3, 01-Jun-17
Document Number: 85162
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000