SD101CW-G3-18

SD101AW-G, SD101BW-G, SD101CW-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring DESIGN SUPPORT TOOLS click logo to get started • AEC-Q101 qualified available  (part number on request) Models • Base P/N-G3 - green, commercial grade MECHANICAL DATA • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available       Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING SK SD101AW-G SD101AW-G3-08 or SD101AW-G3-18 Single SD101BW-G SD101BW-G3-08 or SD101BW-G3-18 Single SL SD101CW-G SD101CW-G3-08 or SD101CW-G3-18 Single SM REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage PART SYMBOL VALUE UNIT SD101AW-G VRRM 60 V SD101BW-G VRRM 50 V SD101CW-G VRRM 40 V Ptot 400 mW IF 30 mA IFSM 2 A SYMBOL VALUE UNIT RthJA 300 K/W Power dissipation (infinite heatsink) (1) Forward continuous current Maximum single cycle surge 10 μs square wave Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature (1) Tj 125 °C Storage temperature range Tstg -65 to +150 °C Operating ttemperature range Top -55 to +125 °C Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.1, 22-Feb-18 Document Number: 85158 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD101AW-G, SD101BW-G, SD101CW-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse breakdown voltage IR = 10 μA VR = 50 V Leakage current MIN. V(BR) 60 TYP. MAX. UNIT V V SD101BW-G V(BR) 50 SD101CW-G V(BR) 40 SD101AW-G IR 200 nA nA V SD101BW-G IR 200 VR = 30 V SD101CW-G IR 200 nA SD101AW-G VF 410 mV Forward voltage drop IF = 15 mA VR = 0 V, f = 1 MHz Reverse recovery time SYMBOL VR = 40 V IF = 1 mA Diode capacitance PART SD101AW-G SD101BW-G VF 400 mV SD101CW-G VF 390 mV SD101AW-G VF 1000 mV SD101BW-G VF 950 mV SD101CW-G VF 900 mV SD101AW-G CD 2 pF SD101BW-G CD 2.1 pF SD101CW-G CD 2.2 pF trr 1 ns IF = IR = 5 mA, recover to 0.1 IR TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 A B C 1 0.1 0.01 0.2 0.4 0.6 0.8 75 °C 1 50 °C 0.1 25 °C 100 40 20 0.2 0.4 0.6 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Variation of Reverse Current at Various Temperatures CD - Typical Capacitance (pF) 60 0 10 2.0 A B C 80 0 18479 Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage I F - Forward Current (mA) 100 °C 1.0 VF - Forward Voltage (V) 18478 10 0.01 0 18477 0 125 °C I R - Reverse Current (µA) I F - Forward Current (mA) 10 0.8 VF - Forward Voltage (V) Fig. 2 - Typical Forward Conduction Curve 1.4 1.2 18480 A 1.0 B C 0.8 0.6 0.4 0.2 0 1.0 T j = 25 °C 1.8 1.6 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage Rev. 1.1, 22-Feb-18 Document Number: 85158 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD101AW-G, SD101BW-G, SD101CW-G www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.40 (0.055) 3.85 (0.152) 1.7 (0.067) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.1, 22-Feb-18 Document Number: 85158 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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