SD101CWS-E3-18

SD101AWS, SD101BWS, SD101CWS www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • For general purpose applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring DESIGN SUPPORT TOOLS click logo to get started • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade Models Available • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MECHANICAL DATA • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART SD101AWS SD101BWS SD101CWS ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING Single SA Single SB Single SC SD101AWS-E3-08 or SD101AWS-E3-18 SD101AWS-HE3-08 or SD101AWS-HE3-18 SD101BWS-E3-08 or SD101BWS-E3-18 SD101BWS-HE3-08 or SD101BWS-HE3-18 SD101CWS-E3-08 or SD101CWS-E3-18 SD101CWS-HE3-08 or SD101CWS-HE3-18 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD101AWS VRRM 60 V SD101BWS VRRM 50 V SD101CWS VRRM 40 V Ptot 150 mW IF 30 mA IFSM 2 A SYMBOL VALUE UNIT RthJA 650 K/W Tj 125 °C Operating temperature range Top -55 to +125 °C Storage temperature range Tstg -65 to +150 °C Repetitive peak reverse voltage Power dissipation (infinite heatsink) (1) Forward continuous current Maximum single cycle surge 10 μs square wave Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature (1) Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.1, 14-Oct-16 Document Number: 85680 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD101AWS, SD101BWS, SD101CWS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse breakdown voltage IR = 10 μA VR = 50 V Leakage current SYMBOL MIN. V(BR) 60 MAX. UNIT V V SD101BWS V(BR) 50 SD101CWS V(BR) 40 SD101AWS IR 200 nA nA V SD101BWS IR 200 VR = 30 V SD101CWS IR 200 nA SD101AWS VF 410 mV SD101BWS VF 400 mV SD101CWS VF 390 mV SD101AWS VF 1000 mV SD101BWS VF 950 mV SD101CWS VF 900 mV SD101AWS CD 2.0 ns SD101BWS CD 2.1 ns SD101CWS CD 2.2 ns trr 1 ns Forward voltage drop IF = 15 mA VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR Reverse recovery time TYP. VR = 40 V IF = 1 mA Junction capacitance PART SD101AWS TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 A B C 1 0.1 0.01 0.2 0.4 0.6 100 °C 75 °C 1 50 °C 0.1 25 °C 0.8 60 40 20 0.2 0.4 0.6 20 30 40 50 VR - Reverse Voltage (V) 18479 Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 0.8 VF - Forward Voltage (V) Fig. 2 - Typical Forward Conduction Curve 1.0 18480 T j = 25 °C 1.8 1.6 1.4 1.2 A 1.0 B C 0.8 0.6 0.4 0.2 0 0 10 2.0 A B C 80 0 1.0 CD - Typical Capacitance (pF) I F - Forward Current (mA) 100 18478 10 0.01 0 VF - Forward Voltage (V) 18477 Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage 0 125 °C I R - Reverse Current (µA) I F - Forward Current (mA) 10 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage Rev. 2.1, 14-Oct-16 Document Number: 85680 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD101AWS, SD101BWS, SD101CWS www.vishay.com Vishay Semiconductors 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 2.1, 14-Oct-16 Document Number: 85680 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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