SD103AW, SD103BW, SD103CW
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Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
DESIGN SUPPORT TOOLS
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• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• The SD103 series is a metal-on-silicon Schottky barrier
device which is protected by a PN junction guardring
Models
• For general purpose applications
Available
• AEC-Q101 qualified available
MECHANICAL DATA
• Base P/N-E3 - RoHS-compliant, commercial grade
Case: SOD-123
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Weight: approx. 10.3 mg
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
SD103AW
SD103BW
SD103CW
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE
MARKING
Single
S6
Single
S7
Single
S8
SD103AW-E3-08 or SD103AW-E3-18
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW-HE3-08 or SD103CW-HE3-18
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
SD103AW
VRRM
40
V
SD103BW
VRRM
30
V
SD103CW
VRRM
20
V
IF
350
mA
Ptot
400
mW
IFSM
2
A
SYMBOL
VALUE
UNIT
RthJA
300
K/W
Tj
125
°C
Operating temperature range
Top
-55 to +125
°C
Storage temperature range
Tstg
-55 to +150
°C
Repetitive peak reverse voltage
Forward continuous current (1)
Power dissipation (infinite heat sink) (1)
Single cycle surge
10 μs square wave
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
(1)
Junction temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 1.7, 23-Feb-18
Document Number: 85681
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MAX.
UNIT
VR = 30 V
SD103AW
IR
5
μA
VR = 20 V
SD103BW
IR
5
μA
VR = 10 V
SD103CW
IR
5
μA
VF
370
mV
600
mV
Leakage current
IF = 20 mA
Forward voltage drop
TYP.
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
50
pF
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
10
ns
Diode capacitance
Reverse recovery time
MIN.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
IR - Reverse Current (µA)
I F - Forward Current (mA)
Tamb = 125 °C
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
50 °C
1
25 °C
0.1
5
10 15 20 25 30 35 40 45 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
5
tp = 300 ms
4
C D - Diode Capacitance (pF)
I F - Forward Current (A)
75 °C
10
20084
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
duty cycle = 2 %
3
2
1
10
1
0
0
18489
100 °C
0.01
0
1.0
VF - Forward Voltage (V)
18488
100
0.5
1.0
0
1.5
VF - Forward Voltage (V)
Fig. 2 - Typical High Current Forward Conduction Curve
18491
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.7, 23-Feb-18
Document Number: 85681
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
VR - Reverse Voltage (V)
50
40
100 mA
30
200 mA
I F = 400 mA
20
10
0
0
100
200
Tamb - Ambient Temperature (°C)
18492
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.40 (0.055)
3.85 (0.152)
1.7 (0.067)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.7, 23-Feb-18
Document Number: 85681
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000