SD241P-E3/45

SD241P www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 • High frequency operation 1 TO-3P (TO-247AD) PIN 1 PIN 2 PIN 3 CASE • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. 30 A VRRM 45 V IFSM 400 A VF 0.47 V MECHANICAL DATA Case: TO-3P (TO-247AD) TJ max. 150 °C Package TO-3P (TO-247AD) Circuit configuration Common cathode Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SD241P UNIT VRRM 45 V VDC 45 V Maximum working peak reverse voltage VRWM 35 V Maximum average forward rectified current at TC = 105 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 400 A Maximum repetitive peak reverse voltage TC = 25 °C Maximum blocking voltage TC = 25 °C Peak repetitive reverse surge current per diode IRSM (1) 2.0 A Voltage rate of change VR = 35 V dV/dt 10 000 V/μs TJ -65 to +150 °C TSTG -65 to +175 °C Operating junction temperature range Storage temperature range Note (1) 2.0 μs pulse width, f = 1.0 kHz ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage VF (1) Maximum reverse current at rated VR IR (1) TEST CONDITIONS SD241P IF = 10 A TC = 25 °C 0.47 IF = 20 A TC = 125 °C 0.60 VR = 35 V UNIT V TC = 25 °C 1.0 mA TC = 125 °C 100 mA Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 27-May-2020 Document Number: 88738 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD241P www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance, junction of case per diode SYMBOL SD241P UNIT RJC 1.4 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD SD241P-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 36 Instantaneous Forward Current (A) 100 Average Forward Current (A) Resistive or Inductive Load 30 24 12 6 Pulse Width = 300 µs 1 % Duty Cycle 10 TJ = 25 °C 1 0.1 0.01 0 0 100 50 0 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 300 200 100 Instantaneous Reverse Current (mA) 400 Peak Forward Surge Current (A) TJ = 150 °C 10 TJ = 125 °C 1 TJ = 75 °C 0.1 0.01 TJ = 25 °C 0.001 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 27-May-2020 Document Number: 88738 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD241P www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 1000 10 1 100 0.1 1 0.1 0.01 100 10 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3P (TO-247AD) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Revision: 27-May-2020 Document Number: 88738 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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