SI1013CX-T1-GE3

Si1013CX www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.760 at VGS = -4.5 V -0.45 1.040 at VGS = -2.5 V -0.40 1.500 at VGS = -1.8 V -0.32 Qg (TYP.) (nC) • 100 % Rg tested • Typical ESD protection: 1000 V (HBM) • Fast switching speed 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SC-89 (3 leads) APPLICATIONS D 3 S • Load / power switch for portable devices • Drivers: relays, solenoids, displays • Battery operated systems 2 S G 1 G Top View D P-Channel MOSFET Marking Code: 6 Ordering Information: Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range UNIT V -0.45 b, c ID -0.36 b, c IDM -1.5 IS -0.16 b, c A 0.19 b, c PD W 0.12 b, c TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, b SYMBOL t≤5s Steady State RthJA TYPICAL MAXIMUM 440 530 540 650 UNIT °C/W Notes a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. S14-1601-Rev. B, 11-Aug-14 Document Number: 67995 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1013CX www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = -250 μA -20 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS - -12 - - 1.8 - VDS = VGS, ID = -250 μA -0.4 - -1 ID = -250 μA VDS = 0 V, VGS = ± 8 V - - ± 30 VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = -20 V, VGS = 0 V - - -1 Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V, TJ = 85 °C - - -10 On-State Drain Current a ID(on) VDS = ≥ 5 V, VGS = -4.5 V -1.5 - - VGS = -4.5 V, ID = -0.4 A - 0.630 0.760 RDS(on) VGS = -2.5 V, ID = -0.2 A - 0.865 1.040 VGS = -1.8 V, ID = -0.1 A - 1.200 1.500 VDS = -10 V, ID = 0.4 A - 1 - - 45 - - 15 - - 10 - - 1.65 2.50 - 1 2 VDS = -0 V, VGS = -2.5 V, ID = -0.4 - 0.2 - - 0.26 - f = 1 MHz 2.4 12 24 - 9 18 Drain-Source On-State Resistance a Forward Transconductance gfs mV/°C V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -4.5 V, ID = -0.4 A td(on) tr - 10 20 - 10 20 tf - 8 16 td(on) - 1 2 - 8 16 - 9 18 - 5 10 td(off) tr td(off) VDD = -10 V, RL = 33.3 Ω ID ≅ -0.3 A, VGEN = -4.5 V, Rg = 1 Ω VDD = -10 V, RL = 33.3 Ω ID ≅ -0.3 A, VGEN = -8 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Pulse Diode Forward Current a ISM Body Diode Voltage VSD IS = -0.3 A - - -1.5 A - -0.8 -1.2 V Body Diode Reverse Recovery Time trr - 16 24 ns Body Diode Reverse Recovery Charge Qrr - 8 16 nC Reverse Recovery Fall Time ta - 11 - Reverse Recovery Rise Time tb - 5 - IF = -0.3 A, dI/dt = 100 A/μs ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1601-Rev. B, 11-Aug-14 Document Number: 67995 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1013CX www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-4 0.010 10-5 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.008 0.006 0.004 TJ = 25 °C TJ = 150 °C 10-6 TJ = 25 °C 10-7 0.002 10-8 0.000 0 3 6 9 12 0 3 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 6 9 12 VGS - Gate-to-Source Voltage (V) 15 Gate Current vs. Gate-Source Voltage 1.5 0.8 VGS = 5 V thru 3 V VGS = 2.5 V ID - Drain Current (A) ID - Drain Current (A) 1.2 0.9 VGS = 2 V 0.6 0.4 TC = 25 °C 0.2 VGS = 1.5 V 0.3 0.6 TC = 125 °C 0 TC = - 55 °C 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.4 Output Characteristics 1.2 1.6 2 Transfer Characteristics 90 2 72 VGS = 1.8 V 1.5 VGS = 2.5 V 1 0.5 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.8 VGS - Gate-to-Source Voltage (V) 54 Ciss 36 Coss 18 Crss 0 0 0 0.3 0.6 0.9 1.2 ID - Drain Current (A) On-Resistance vs. Drain Current S14-1601-Rev. B, 11-Aug-14 1.5 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance Document Number: 67995 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1013CX www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 1.5 ID = 0.35 A 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.4 A VDS = 5 V VDS = 10 V 4 VDS = 16 V 2 0 0 0.45 0.9 1.35 1.3 VGS = 4.5 V 1.1 0.9 0.7 - 50 1.8 VGS = 2.5 V - 25 Qg - Total Gate Charge (nC) Gate Charge 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 1.2 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.35 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 1.0 TJ = 125 °C 0.8 TJ = 25 °C 0.6 0.4 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 1 Source-Drain Diode Forward Voltage 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 8 On-Resistance vs. Gate-to-Source Voltage 0.7 10 8 Power (W) 0.6 VGS(th) (V) 2 ID = 250 μA 0.5 6 4 0.4 2 0.3 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S14-1601-Rev. B, 11-Aug-14 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient Document Number: 67995 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1013CX www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.25 0.20 BVDSS Limited 100 μs 1 Power (W) ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 ms 0.15 0.10 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 0.05 1s 10 s, DC 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67995. S14-1601-Rev. B, 11-Aug-14 Document Number: 67995 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SC89Ć3 X E D A C H L DETAIL X 3 MILLIMETERS 1 2 e1 b e INCHES Dim A Min Max Min Max 0.60 0.80 0.024 0.031 b 0.23 0.33 0.009 0.013 C D E e e1 H L 0.10 0.20 0.004 0.008 1.50 1.70 0.059 0.067 0.75 0.95 0.030 0.037 1.00 BSC 0.50 BSC 0.040 BSC 0.020 BSC 1.50 1.70 0.059 0.067 0.30 0.50 0.012 0.020 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5869 Document Number: 71377 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead (0.38 ) ) 0.0170 0.0260 (0.43 ) ) 0.0150 (0.51) ) (0.66 ) ) 0.0200 (1.75 ) ) 0.0690 RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD 0.0250 0.0150 (0.64) ) (0.38 ) ) 0.0550 (1.40 ) ) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 20 Document Number: 72604 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000