Si1013R/X
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (mA)
1.2 at VGS = - 4.5 V
- 350
1.6 at VGS = - 2.5 V
- 300
2.7 at VGS = - 1.8 V
- 150
SC-75A or SC-89
G
APPLICATIONS
1
3
S
• Halogen-free According to IEC 61249-2-21
Definition
• High-Side Switching
• Low On-Resistance: 1.2
• Low Threshold: 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• TrenchFET® Power MOSFETs
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
D
SC-75A (SOT-416):
Si1013R - Marking Code D
SC-89 (SOT-490):
Si1013X - Marking Code B
2
Top View
Ordering Information:
Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±6
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 85 °C
Pulsed Drain Currenta
ID
- 400
Continuous Source Current (Diode Conduction)b
Maximum Power Dissipationb for SC-75
b
Maximum Power Dissipation for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
V
- 350
- 300
IDM
- 275
- 1000
- 275
- 250
TA = 25 °C
175
150
TA = 85 °C
90
80
275
250
160
140
TA = 25 °C
PD
TA = 85 °C
Unit
mA
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board.
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
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1
Si1013R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
µA
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
±1
±2
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
- 0.3
- 100
nA
-5
µA
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 350 mA
0.8
1.2
RDS(on)
VGS = - 2.5 V, ID = - 300 mA
1.2
1.6
VGS = - 1.8 V, ID = - 150 mA
1.8
2.7
gfs
VDS= - 10 V, ID = - 250 mA
0.4
VSD
IS = - 150 mA, VGS = 0 V
- 0.8
Gate Threshold Voltage
Drain-Source On-State
Resistancea
Forward Transconductancea
Diode Forward Voltagea
V
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
- 700
mA
S
- 1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
1500
VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA
450
5
VDD = - 10 V, RL = 47
ID - 200 mA, VGEN = - 4.5 V, Rg = 10
tr
Rise Time
td(off)
Turn-Off Delay Time
pC
150
9
ns
35
tf
Fall Time
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
11
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values.
1.0
1000
VGS = 5 V thru 3 V
TJ = - 55 °C
2.5 V
0.6
2V
0.4
1.8 V
0.2
0.0
0.0
600
125 °C
400
200
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
25 °C
800
I D - Drain Current (mA)
I D - Drain Current (A)
0.8
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
3.0
Transfer Characteristics
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
120
100
3.2
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance ()
4.0
2.4
VGS = 2.5 V
1.6
VGS = 4.5 V
Ciss
80
60
40
Coss
0.8
20
Crss
0
0.0
0
200
400
600
800
1000
0
4
8
On-Resistance vs. Drain Current
16
20
Capacitance
1.6
5
VDS = 10 V
ID = 250 mA
1.4
4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (mA)
3
2
1.2
VGS = 1.8 V
ID = 150 mA
1.0
0.8
1
0
0.0
VGS = 4.5 V
ID = 350 mA
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
- 50
1.6
- 25
0
25
50
75
100
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
125
5
1000
RDS(on) - On-Resistance ()
I S - Source Current (mA)
TJ = 125 °C
100
TJ = 25 °C
TJ = - 55 °C
10
1
0.0
4
3
ID = 350 mA
2
ID = 200 mA
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Surge-Drain Diode Forward Voltage
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
1.4
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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3
Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3.0
0.3
2.5
ID = 0.25 mA
2.0
0.1
IGSS - (µA)
V GS(th) Variance (V)
0.2
0.0
1.5
VGS = 4.5 V
- 0.1
1.0
- 0.2
0.5
- 0.3
- 50
- 25
0
25
50
75
100
0.0
- 50
125
- 25
TJ - Temperature (°C)
0
25
50
75
100
125
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
IGSS vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
7
6
5
4
3
2
1
0
- 50
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 833 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
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4
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
1
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71167.
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
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5
Package Information
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Vishay Siliconix
SC-75A: 3 Leads
L2
A
2
D
1
D bbb
D
e2
2X
D
3
L1
L
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
bbb
D
1
2
C
bbb C
D
4
ddd M
C
B
3
2X
e3
B1
b1
2XB1
A– B
B
B
2X
D
c1
C
With Tin Planting
bbb
D
Section B-B 5
A
A2
Base Metal
C
4X
Seating Plane
A1
D
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIMENSIONS
TOLERANCES
aaa
0.10
bbb
0.10
ccc
0.10
ddd
C15-1445-Rev. F, 23-Nov-15
0.10
DIM.
MILLIMETERS
MIN.
NOM.
MAX.
A
-
-
0.80
A1
0.00
-
0.10
NOTE
A2
0.65
0.70
0.80
B1
0.19
-
0.24
b1
0.17
-
0.21
c
0.13
-
0.15
c1
0.10
-
0.12
5
D
1.48
1.575
1.68
1, 2
E
1.50
1.60
1.70
E1
0.66
0.76
0.86
e1
0.50 BSC
e2
1.00 BSC
e3
L
5
5
1, 2
0.50 BSC
0.15
0.205
L1
0.40 ref.
L2
0.15 BSC
0.30
q
0°
-
8°
q1
4°
-
10°
Document Number: 71348
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
0.031
(0.798)
0.020
(0.503)
(1.803)
0.071
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72603
Revision: 21-Jan-08
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19
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
1
Document Number: 91000
