SI1016CX-T1-GE3

Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches 0.456 at VGS = 2.5 V 0.20 0.546 at VGS = 1.8 V 0.20 0.760 at VGS = 1.5 V 0.05 • Low-voltage operation 0.756 at VGS = -4.5 V -0.35 • High-speed circuits 1.038 at VGS = -2.5 V -0.35 1.440 at VGS = -1.8 V -0.10 2.400 at VGS = -1.5 V -0.05 0.75 nC 1 nC G2 5 • Low offset (error) voltage • Typical ESD protection: n-channel 900 V, p-channel 900 V (HBM) • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SC-89 Dual (6 leads) D1 6 • TrenchFET® power MOSFETs S2 4 APPLICATIONS • Load switch, small signal switches and level-shift switches - Battery operated systems 1 S1 Top View 2 G1 - Portable 3 D2 D1 S2 G1 Marking Code: 5 G2 Ordering Information: Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET N-Channel MOSFET D2 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Source Drain Current Diode Current Maximum Power Dissipation TA = 25 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range V ±8 0.6 a, b -0.6 a, b 0.49 a, b -0.49 a, b IDM 2 -1.5 IS 0.18 a, b -0.18 a, b 0.22 a, b 0.22 a, b 0.14 a, b 0.14 a, b ID PD TJ, Tstg UNIT -55 to 150 A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, c SYMBOL t≤5s Steady State RthJA N-CHANNEL P-CHANNEL TYP. MAX. TYP. MAX. 470 565 470 565 560 675 560 675 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 675 °C/W. S14-1174-Rev. C, 09-Jun-14 Document Number: 67535 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) VGS = 0 V, ID = 250 μA N-Ch 20 - - VGS = 0 V, ID = -250 μA P-Ch -20 - - ID = 250 μA N-Ch - 17 - ID = -250 μA P-Ch - -12 - ID = 250 μA N-Ch - -1.8 - ID = -250 μA P-Ch - 1.8 - VDS = VGS, ID = 250 μA N-Ch 0.4 - 1 VDS = VGS, ID = -250 μA P-Ch -0.4 - -1 VDS = 0 V, VGS = ± 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Current b Drain-Source On-State Resistance b IDSS ID(on) RDS(on) Forward Transconductance b gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Ch - - ±1 P-Ch - - ±1 N-Ch - - ± 30 P-Ch - - ± 30 N-Ch - - 1 VDS = -20 V, VGS = 0 V P-Ch - - -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10 -10 VDS = -20 V, VGS = 0 V, TJ = 55 °C P-Ch - - VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 - - VDS ≤ -5 V, VGS = -4.5 V P-Ch -1.5 - - VGS = 4.5 V, ID = 0.5 A N-Ch - 0.330 0.396 VGS = -4.5 V, ID = -0.35 A P-Ch - 0.630 0.756 VGS = 2.5 V, ID = 0.2 A N-Ch - 0.380 0.456 VGS = -2.5 V, ID = -0.35 A P-Ch - 0.865 1.038 VGS = 1.8 V, ID = 0.2 A N-Ch - 0.420 0.546 VGS = -1.8 V, ID = -0.1 A P-Ch - 1.200 1.440 VGS = 1.5 V, ID = 0.05 A N-Ch - 0.505 0.760 VGS = -1.5 V, ID = -0.05 A P-Ch - 1.600 2.400 VDS = 10 V, ID = 0.5 A N-Ch - 2 - VDS = -10 V, ID = -3.6 A P-Ch - 1 - N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1 MHz N-Ch - 43 - P-Ch - 45 - N-Ch - 14 - P-Ch - 15 - N-Ch - 8 - P-Ch - 10 - N-Ch - 1.3 2 V mV/°C V μA A Ω S pF Dynamic a VDS = 10 V, VGS = 4.5 V, ID = 0.6 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance S14-1174-Rev. C, 09-Jun-14 Qg VDS = -10 V, VGS = -4.5 V, ID = -0.4 A Rg - 1.65 2.50 - 0.75 1.2 N-Channel VDS = 10 V, VGS = 2.5 V, ID = 0.6 A P-Ch - 1 2 N-Ch - 0.15 - P-Channel VDS = -10 V, VGS = -2.5 V, ID = -0.4 A P-Ch - 0.2 - N-Ch - 0.13 - Qgs Qgd P-Ch N-Ch f = 1 MHz P-Ch - 0.26 - N-Ch 2.4 12.2 24.4 P-Ch 2.4 12 24 nC Ω Document Number: 67535 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. N-Ch - 11 20 P-Ch - 9 18 N-Ch - 16 24 P-Ch - 10 20 N-Ch - 26 39 P-Ch - 10 20 N-Ch - 11 20 UNIT Dynamic a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = -10 V, RL = 33.3 Ω ID ≅ -0.3 A, VGEN = -4.5 V, Rg = 1 Ω tf td(on) tr td(off) P-Ch - 8 16 N-Ch - 2 4 P-Ch - 1 2 N-Ch - 13 20 P-Ch - 8 16 N-Ch - 7 14 P-Ch - 9 18 N-Ch - 5 10 P-Ch - 5 10 N-Ch - - 2 P-Ch - - -1.5 IS = 0.5 A, VGS = 0 V N-Ch - 0.85 1.2 IS = -0.3 A, VGS = 0 V P-Ch - -0.87 -1.2 N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 8 V, Rg = 1 Ω P-Channel VDD = -10 V, RL = 33.3 Ω ID ≅ -0.3 A, VGEN = -8 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Pulse Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb N-Channel IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C P-Channel IF = -0.3 A, dI/dt = -100 A/μs, TJ = 25 °C N-Ch - 10 20 P-Ch - 16 24 N-Ch - 2 4 P-Ch - 8 20 N-Ch - 5 - P-Ch - 11 - N-Ch - 5 - P-Ch - 5 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1174-Rev. C, 09-Jun-14 Document Number: 67535 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-4 10-5 0.6 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.8 0.4 TJ = 25 °C 0.2 TJ = 150 °C -6 10 TJ = 25 °C 10-7 10-8 0 0 2 4 6 8 10 12 10-9 14 0 4 VGS - Gate-Source Voltage (V) 7 11 14 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 0.5 2 0.4 VGS = 5 V thru 2 V ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 1.5 V 1 0.5 0.3 TC = 25 °C 0.2 0.1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 0 2 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.8 1.5 60 Ciss VGS = 1.8 V 45 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.5 V 0.6 VGS = 2.5 V 0.4 30 Coss 15 VGS = 4.5 V Crss 0.2 0 0 0.5 1 1.5 ID - Drain Current (A) On-Resistance vs. Drain Current S14-1174-Rev. C, 09-Jun-14 2 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 67535 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.6 A VDS = 5 V 6 VDS = 10 V 4 VDS = 16 V 2 ID = 0.5 A VGS = 4.5 V 1.4 1.2 1.0 0.8 VGS = 2.5 V 0.6 - 50 0 0 0.5 1 1.5 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.8 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.75 2.7 ID = 250 μA 2.25 0.65 Power (W) VGS(th) (V) 1.8 0.55 1.35 0.9 0.45 0.45 0.35 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S14-1174-Rev. C, 09-Jun-14 100 125 150 0 0.01 0.1 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient Document Number: 67535 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.24 BVDSS Limited 100 μs 1 0.18 Power (W) ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 ms 0.12 0.1 0.06 100 ms TC = 25 °C Single Pulse 1s 10 s, DC 0.01 0.1 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 675 °C/W 0.01 0.0001 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S14-1174-Rev. C, 09-Jun-14 Document Number: 67535 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.010 10-4 10-5 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.008 0.006 0.004 TJ = 25 °C 0.002 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 0.000 0 3 6 9 12 0 3 VGS - Gate-Source Voltage (V) 9 12 15 Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 0.8 1.5 VGS = 5 V thru 3 V VGS = 2.5 V 1.2 0.6 ID - Drain Current (A) ID - Drain Current (A) 6 VGS - Gate-to-Source Voltage (V) 0.9 VGS = 2 V 0.6 TC = 25 °C 0.2 VGS = 1.5 V 0.3 0.4 TC = 125 °C 0 TC = - 55 °C 0 0 0.5 1 1.5 2 0 0.4 VDS - Drain-to-Source Voltage (V) 1.2 1.6 2 Transfer Characteristics Output Characteristics 2 90 VGS = 1.8 V 1.5 72 VGS = 1.5 V VGS = 2.5 V 1 0.5 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.8 VGS - Gate-to-Source Voltage (V) 54 Ciss 36 VGS = 4.5 V Coss 18 Crss 0 0 0 0.3 0.6 0.9 1.2 ID - Drain Current (A) On-Resistance vs. Drain Current S14-1174-Rev. C, 09-Jun-14 1.5 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance Document Number: 67535 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 8 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.35 A ID = 0.4 A VDS = 5 V VDS = 10 V 4 VDS = 16 V 2 0 0.45 0.9 1.35 1.3 VGS = 4.5 V 1.1 0.9 0.7 - 50 0 1.8 VGS = 2.5 V - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 150 1.2 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.35 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 1.0 TJ = 125 °C 0.8 TJ = 25 °C 0.6 0.4 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 1 3 4 5 6 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 2 7 8 2.7 2.25 0.6 Power (W) VGS(th) (V) 1.8 ID = 250 μA 0.5 1.35 0.9 0.4 0.45 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.01 TJ - Temperature (°C) 1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S14-1174-Rev. C, 09-Jun-14 0.1 10 100 Document Number: 67535 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1016CX www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.24 Limited by RDS(on)* 100 μs 0.18 1 ms Power (W) ID - Drain Current (A) 1 10 ms 0.1 100 ms 1s 10 s, DC 0.01 0.06 BVDSS Limited TC = 25 °C Single Pulse 0.001 0.1 0.12 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 675 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.0001 4. Surface Mounted Single Pulse 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67535. S14-1174-Rev. C, 09-Jun-14 Document Number: 67535 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000