SI1021R-T1-GE3

Si1021R Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • High-Side Switching • Low On-Resistance: 4  • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Miniature Package • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC D Marking Code: F 2 • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays Top View Ordering Information: Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) BENEFITS • • • • • • Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer Small Board Area ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71410 S10-2687-Rev. F, 22-Nov-10 ID IDM TA = 25 °C TA = 85 °C PD Unit V - 190 - 135 mA - 650 250 130 mW RthJA 500 °C/W TJ, Tstg - 55 to 150 °C www.vishay.com 1 Si1021R Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 10 µA - 60 VGS(th) VDS = VGS, ID = - 0.25 mA -1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage - 3.0 VDS = 0 V, VGS = ± 20 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance a RDS(on) ± 10 VDS = 0 V, VGS = ± 10 V ± 200 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 50 V, VGS = 0 V - 25 VDS = - 50 V, VGS = 0 V, TJ = 85 °C - 250 VDS = -10 V, VGS = - 4.5 V - 50 VDS = -10 V, VGS = - 10 V - 600 V µA nA mA VGS = - 4.5 V, ID = - 25 mA 8 VGS = - 10 V, ID = - 500 mA 4 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C 6  Forward Transconductance gfs VDS = - 10 V, ID = - 100 mA 80 mS Diode Forward Voltagea VSD VDS = - 200 mA, VGS = 0 V 80 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1.7 VDS = - 30 V, VGS = - 15 V, ID  - 500 mA 0.26 nC 0.46 23 VDS = - 25 V, VGS = 0 V, f = 1 MHz 10 pF 5 Switchingb Turn-On Time tON Turn-Off Time tOFF VDD = - 25 V, RL = 150 , ID  - 200 mA, VGEN = - 10 V, Rg = 10  20 35 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71410 S10-2687-Rev. F, 22-Nov-10 Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 1200 VGS = 10 V TJ = - 55 °C 7V 8V I D - Drain Current (mA) I D - Drain Current (A) 0.8 6V 0.6 0.4 5V 900 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 40 20 16 32 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 0 V VGS = 4.5 V 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID - Drain Current (mA) 10 25 Capacitance 1.8 15 ID = 500 mA 1.5 12 VDS = 48 V 9 6 3 VGS = 10 V at 500 mA 1.2 (Normalized) VDS = 30 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0 0.0 15 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71410 S10-2687-Rev. F, 22-Nov-10 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 1000 RDS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 8 ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.5 3 0.4 2.5 ID = 250 µA 2 0.2 Power (W) VGS(th) Variance (V) 0.3 0.1 1.5 - 0.0 1 TA = 25 °C - 0.1 0.5 - 0.2 - 0.3 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 100 10 1 600 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71410. www.vishay.com 4 Document Number: 71410 S10-2687-Rev. F, 22-Nov-10 Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd  C15-1445-Rev. F, 23-Nov-15 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 NOTE A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 L 5 5 1, 2 0.50 BSC 0.15 0.205 L1 0.40 ref. L2 0.15 BSC 0.30 q 0° - 8° q1 4° - 10° Document Number: 71348 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) (1.803) 0.071 (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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