SI1026X-T1-GE3

Si1026X Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 30 pF • Fast Switching Speed: 15 ns (typ.) • Low Input and Output Leakage • ESD Protected: 2000 V • Miniature Package • Compliant to RoHS Directive 2002/95/EC BENEFITS SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: E • • • • • Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area APPLICATIONS Top View Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C b Continuous Source Current (Diode Conduction)a Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25 °C TA = 85 °C PD V 320 305 230 220 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit mA - 650 450 380 280 250 145 130 mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 1 Si1026X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 10 µA 60 VGS(th) VDS = VGS, ID = 0.25 mA 1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-Resistancea ID(on) RDS(on) 2.5 VDS = 0 V, VGS = ± 10 V ± 150 VDS = 0 V, VGS = ± 5 V ± 50 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 85 °C 500 VDS = 7.5 V, VGS = 10 V 800 3.0 VGS = 10 V, ID = 500 mA 1.40 Diode Forward Voltage a VDS = 10 V, ID = 200 mA VSD VGS = 0 V, IS = 200 mA µA mA VGS = 4.5 V, ID = 200 mA gfs nA 10 VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 500 mA, TJ = 125 °C Forward Transconductancea V  2.50 200 mS 1.40 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 600 VDS = 10 V, ID = 250 mA, VGS = 4.5 V 120 pC 225 30 VDS = 25 V, VGS = 0 V, f = 1 MHz 6 pF 3 Switchingb, c Turn-On Time t(on) Turn-Off Time t(off) VDD = 30 V, RL = 150  ID = 200 mA, VGEN = 10 V, Rg = 10  15 20 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1200 1.0 6V TJ = - 55 °C VGS = 10 V thru 7 V 5V I D - Drain Current (mA) I D - Drain Current (A) 0.8 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 50 VGS = 0 V f = 1 MHz 3.5 40 3.0 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 1.0 30 Ciss 20 Coss 10 0.5 Crss 0.0 0 0 200 400 600 800 1000 0 5 ID - Drain Current (mA) 10 25 Capacitance 7 2.0 VGS = 10 V at 500 mA VDS = 10 V ID = 250 mA 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 15 5 4 3 2 VGS = 4.5 V at 200 mA 1.2 0.8 0.4 1 0 0.0 0.1 0.2 0.3 0.4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 0.5 0.6 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 4 3 2 ID = 500 mA ID = 200 mA 1 TJ = - 55 °C 0 1 0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 VGS(th) Variance (V) 0.2 ID = 250 µA -0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71434. www.vishay.com 4 Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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