Si1035X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
20
- 20
RDS(on) ()
ID (mA)
5 at VGS = 4.5 V
200
7 at VGS = 2.5 V
175
9 at VGS = 1.8 V
150
10 at VGS = 1.5 V
50
8 at VGS = - 4.5 V
- 150
12 at VGS = - 2.5 V
- 125
15 at VGS = - 1.8 V
- 100
20 at VGS = - 1.5 V
- 30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 1.5 V Rated
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 5
P-Channel, 8
• Low Threshold: ± 0.9 V (typ.)
• Fast Switching Speed: 45 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
SC-89
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
•
•
•
•
•
Marking Code: M
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
Top View
Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)
•
•
•
•
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Pulsed Drain Currentb
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
PD
P-Channel
Steady State
5s
20
Steady State
- 20
190
180
- 155
- 145
140
130
- 110
- 105
650
Unit
V
±5
IDM
Continuous Source Current (Diode Conduction)
Maximum Power Dissipationa
ID
5s
- 650
450
380
- 450
- 380
280
250
280
250
145
130
145
130
mA
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
1
Si1035X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.40
VDS = VGS, ID = - 250 µA
P-Ch
- 0.40
VDS = 0 V, VGS = ± 2.8 V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State
Resistancea
Forward Transconductancea
Diode Forward Voltagea
IDSS
ID(on)
RDS(on)
gfs
VSD
V
N-Ch
± 0.5
± 1.0
P-Ch
± 0.5
± 1.0
N-Ch
± 1.5
± 3.0
± 3.0
P-Ch
± 1.0
VDS = 16 V, VGS = 0 V
N-Ch
1
500
VDS = - 16 V, VGS = 0 V
P-Ch
-1
- 500
VDS = 16 V, VGS = 0 V, TJ = 85 °C
N-Ch
10
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
P-Ch
- 10
VDS = 5 V, VGS = 4.5 V
N-Ch
250
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 200
µA
nA
µA
mA
VGS = 4.5 V, ID = 200 mA
N-Ch
5
VGS = - 4.5 V, ID = - 150 mA
P-Ch
8
VGS = 2.5 V, ID = 175 mA
N-Ch
7
VGS = - 2.5 V, ID = 125 mA
P-Ch
12
VGS = 1.8 V, ID = 150 mA
N-Ch
9
VGS = - 1.8 V, ID = - 100 mA
P-Ch
15
VDS = 1.5 V, ID = 40 mA
N-Ch
10
VDS = - 1.5 V, ID = - 30 mA
P-Ch
VDS = 10 V, ID = 200 mA
N-Ch
0.5
VDS = - 10 V, ID = - 150 mA
P-Ch
0.4
IS = 150 mA, VGS = 0 V
N-Ch
1.2
IS = - 150 mA, VGS = 0 V
P-Ch
- 1.2
20
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
tON
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 150 mA
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA
N-Ch
750
P-Ch
1500
N-Ch
75
P-Ch
150
N-Ch
225
P-Ch
450
pC
N-Channel
VDD = 10 V, RL = 47
ID 250 mA, VGEN = 4.5 V, Rg = 10
N-Ch
75
P-Ch
80
P-Channel
VDD = - 10 V, RL = 65
ID - 150 mA, VGEN = - 4.5 V, Rg = 10
N-Ch
75
P-Ch
90
ns
Turn-Off Time
tOFF
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Si1035X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.5
600
TJ = - 55 °C
VGS = 5 V thru 1.8 V
500
I D - Drain Current (mA)
I D - Drain Current (A)
0.4
0.3
0.2
25 °C
400
125 °C
300
200
0.1
100
1V
0.0
0
1
2
3
4
5
0
0.0
6
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
100
40
80
30
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 0 V
f = 1 MHz
20
VGS = 1.8 V
Ciss
60
40
Coss
10
20
VGS = 2.5 V
VGS = 4.5 V
Crss
0
0
0
50
100
150
200
0
250
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (mA)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VDS = 10 V
ID = 150 mA
1.4
4
3
2
1.2
VGS = 1.8 V
ID = 175 mA
1.0
0.8
1
0
0.0
VGS = 4.5 V
ID = 200 mA
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
0.2
0.4
0.6
0.8
0.6
- 50
- 25
0
25
50
75
100
Q g - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
125
www.vishay.com
3
Si1035X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
1000
ID = 200 mA
100
TJ = 25 °C
TJ = 50 °C
10
1
0.0
40
R DS(on) - On-Resistance (Ω)
I S - Source Current (mA)
TJ = 125 °C
ID = 175 mA
30
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
Source-Drain Diode Forward Voltage
3
4
5
6
On-Resistance vs. Gate-to-Source Voltage
3.0
0.3
2.5
0.2
ID = 0.25 mA
2.0
0.1
IGSS - (µA)
VGS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0.0
1.5
1.0
- 0.1
VGS = 2.8 V
0.5
- 0.2
- 0.3
- 50
- 25
0
25
50
75
100
0.0
- 50
125
- 25
0
25
50
75
TJ - Temperature (°C)
IGSS vs. Temperature
BV GSS - Gate-to-Source Breakdown Voltage (V)
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
100
125
7
6
5
4
3
2
1
0
- 50
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
www.vishay.com
4
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Si1035X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.5
500
2V
VGS = 5 V thru 2.5 V
TJ = - 55 °C
1.8 V
0.3
0.2
125 °C
300
200
0.1
100
0.0
0
1
2
3
4
5
0
0.0
6
0.5
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
120
VGS = 1.8 V
VGS = 0 V
f = 1 MHz
100
C - Capacitance (pF)
20
15
VGS = 2.5 V
10
Ciss
80
60
40
VGS = 4.5 V
Coss
5
20
0
Crss
0
0
200
400
600
800
1000
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
I D - Drain Current (mA)
On-Resistance vs. Drain Current
Capacitance
5
1.6
VDS = 10 V
ID = 150 mA
4
1.4
3
2
1
0
0.0
VGS = 4.5 V
ID = 150 mA
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
VDS - Drain-to-Source Voltage (V)
25
R DS(on) - On-Resistance (Ω)
25 °C
400
I D - Drain Current (mA)
ID - Drain Current (A)
0.4
1.2
VGS = 1.8 V
ID = 125 mA
1.0
0.8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.6
- 50
- 25
0
25
50
75
100
Q g - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
125
www.vishay.com
5
Si1035X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
50
40
RDS(on) - On-Resistance (Ω)
I S - Source Current (mA)
TJ = 125 °C
100
TJ = 25 °C
TJ = - 55 °C
10
ID = 150 mA
30
20
10
ID = 125 mA
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
VSD - S o ur c e-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3
4
5
6
On-Resistance vs. Gate-to-Source Voltage
0.3
3.0
0.2
2.5
ID = 0.25 mA
0.1
2.0
IGSS - (µA)
VGS(th) Variance (V)
2
V GS - Gate-to-Source Voltage (V)
0.0
- 0.1
1.0
- 0.2
0.5
- 0.3
- 50
- 25
0
25
50
75
100
VGS = 2.8 V
1.5
0.0
- 50
125
- 25
TJ - Temperature (°C)
25
50
75
100
125
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
0
IGSS vs. Temperature
0
-1
-2
-3
-4
-5
-6
-7
- 50
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
www.vishay.com
6
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Si1035X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71426.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
7
Package Information
www.vishay.com
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
E1/2
2
3
aaa
D
e1
4
C
2x
4
A
B
D
6
5
4
SECTION B-B
C
E/2
2
E
E1
3
6
2x
DETAIL “A”
aaa
C
1
5
2
2x
3
bbb
C
e
B
6x b
4
ddd
M
C
A–B D
L1
A1
L
A
A1
SEE DETAIL “A”
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Revision: 11-Aug-14
DIM.
MILLIMETERS
MIN.
NOM.
A
0.56
0.58
MAX.
0.60
A1
0
0.02
0.10
b
0.15
0.22
0.30
0.18
c
0.10
0.14
D
1.50
1.60
1.70
E
1.50
1.60
1.70
1.25
E1
1.15
1.20
e
0.45
0.50
0.55
e1
0.95
1.00
1.05
L
0.25
0.35
0.50
L1
0.10
0.20
0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Document Number: 71612
1
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
www.vishay.com
21
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000