New Product
Si1046X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)a
0.420 at VGS = 4.5 V
0.606
0.501 at VGS = 2.5 V
0.505
0.660 at VGS = 1.8 V
0.15
Qg (Typ.)
0.92
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 1.8 V Rated
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
SC89-3L
1
Marking Code
3
3
S
YY
G
XX
D
Lot Traceability
and Date Code
Part # Code
2
Top View
Ordering Information: Si1046X-T1-E3 (Lead (Pb)-free)
Si1046X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
Symbol
VDS
VGS
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
Unit
V
b, c
ID
IDM
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Limit
20
±8
0.606
0.485b, c
2.5
A
0.21b, c
0.25b, c
0.16b, c
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
t≤5s
Steady State
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
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1
New Product
Si1046X
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductance
RDS(on)
gfs
V
20.5
mV/°C
- 2.12
0.35
0.95
V
± 30
mA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
10
VDS = ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 0.606 A
2.5
µA
A
0.336
0.420
VGS = 2.5 V, ID = 0.505 A
0.395
0.501
VGS = 1.8 V, ID = 0.150 A
0.438
0.660
VDS = 10 V, ID = 0.606 A
2.1
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
66
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
pF
7
VDS = 10 V, VGS = 5 V, ID = 0.606 A
VDS = 10 V, VGS = 4.5 V, ID = 0.606 A
0.99
1.49
0.92
1.38
0.15
nC
0.30
f = 1 MHz
td(on)
td(off)
17
VDD = 10 V, RL = 20.8 Ω
ID ≅ 0.48 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Ω
212
17
26
19
28.5
76
114
27
41
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
2.5
IS = 0.48 A
IF = 1.0 A, dI/dt = 100 A/µs
A
0.8
1.2
V
16
24
ns
4.8
7.2
nC
12.3
3.7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
New Product
Si1046X
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
0.8
2.5
VGS = 5 V thru 2 V
2.0
I D - Drain Current (A)
I D - Drain Current (A)
0.6
1.5
VGS = 1.5 V
1.0
0.4
TJ = 25 °C
0.2
0.5
TJ = 125 °C
VGS = 1.0 V
0.0
0.0
0.5
1.0
1.5
2.0
TJ = - 55 °C
0.0
0.0
2.5
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
2.0
100
0.8
80
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - D to S On-Resistance (Ω)
0.4
0.6
VGS = 2.5 V
0.4
Ciss
60
40
Coss
VGS = 4.5 V
0.2
0.0
0.0
20
Crss
0
0.6
1.2
1.8
2.4
3.0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.8
5
1.6
4
VDS = 10 V
3
VDS = 16 V
2
1
0
0.00
VGS = 4.5 V, ID = 0.606 A
VGS = 2.5 V, ID = 0.505 A
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 0.606 A
1.2
VGS = 1.8 V, ID = 0.15 A
1.0
0.8
0.25
0.50
0.75
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
1.00
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si1046X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.0
10
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 0.606 A
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.8
0.6
TA = 125 °C
0.4
TA = 25 °C
0.2
0.0
0.001
0
0.3
0.6
0.9
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs Temperature
1.0
10
Limited by RDS(on)*
1 ms
0.8
ID - Drain Current (A)
1
V GS(th) (V)
ID = 250 µA
0.6
0.4
10 ms
100 ms
0.1
1s
10 s
DC
0.01
TA = 25 °C
Single Pulse
0.2
- 50
- 25
0
25
50
75
100
125
150
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
TJ - Temperature (°C)
Threshold Voltage
Safe Operating Area, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74594.
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Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
