Si1051X
Vishay Siliconix
P-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
1.2
0.122 at VGS = - 4.5 V
-8
0.141 at VGS = - 2.5 V
1.1
0.168 at VGS = - 1.8 V
0.60
0.198 at VGS = - 1.5 V
0.50
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
5.91
APPLICATIONS
• Load Switch for Portable Applications
SC-89 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
Marking Code
2
XX
YY
D
Lot Traceability
and Date Code
S
G
Part # Code
Top View
D
P-Channel MOSFET
Ordering Information: Si1051X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±5
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
TA = 25 °C
TA = 25 °C
TA = 70 °C
V
1.2b, c
ID
0.97b, c
A
IDM
-8
IS
0.2b, c
A
0.236b, c
W
PD
b, c
0.151
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Based on TA = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 74479
S10-2542-Rev. C, 08-Nov-10
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1
Si1051X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
-8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 6.19
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-1
V
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
VDS = - 8 V, VGS = 0 V
-1
nA
VDS = - 8 V, VGS = 0 V, TJ = 85 °C
- 10
µA
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.2 A
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductance
gfs
2.13
- 0.3
-8
A
0.091
0.122
VGS = - 2.5 V, ID = - 1.1A
0.106
0.141
VGS = - 1.8 V, ID = - 0.60 A
0.117
0.168
VGS = - 1.5 V, ID = - 0.50 A
0.129
0.198
VDS = - 4 V, ID = - 1.2 A
4.93
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
560
VDS = - 4 V, VGS = 0 V, f = 1 MHz
180
pF
112
VDS = - 4 V, VGS = - 5 V, ID = - 1.2 A
VDS = - 4 V, VGS = - 4.5 V, ID = - 1.2 A
6.3
9.45
5.91
8.87
1.98
nC
1.25
9.8
14.7
7.2
10.8
36
54
52
78
16
24
-8
A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
18.8
28.2
nC
Body Diode Reverse Recovery Charge
Qrr
4.7
7.05
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
f = 1 MHz
td(on)
tr
td(off)
VDD = - 4 V, RL = 4.16
ID - 0.96 A, VGEN = - 4.5 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = - 1.0 A
IF = - 1.0 A, dI/dt = 100 A/µs
15
ns
3.8
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74479
S10-2542-Rev. C, 08-Nov-10
Si1051X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
2.4
VGS = 5 V thru 2.5 V
2.0
VGS = 2 V
I D - Drain Current (A)
I D - Drain Current (A)
6
4
VGS = 1.5 V
2
1.6
1.2
0.8
TC = 25 °C
0.4
TC = 125 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
TC = - 55 °C
0.0
0.0
2.5
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temp.
1000
0.4
800
0.3
VGS = 1.8 V
C - Capacitance (pF)
RDS(on) - On-Resistance ( )
VGS = 1.5 V
0.2
VGS = 2.5 V
Ciss
600
400
Coss
0.1
200
VGS = 4.5 V
Crss
0
0.0
0
2
4
6
8
0
10
2
ID - Drain Current (A)
6
8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
5
ID = 1.12 A
VGS = 4.5 V, ID = 1.12 A
VGS = 4.5 V, ID = 1.0 A
VGS = 4.5 V, ID = 0.60 A
1.4
4
VDS = 4 V
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
4
3
VDS = 6.4 V
2
1.2
VGS = 1.5 V, ID = 0.50 A
1.0
0.8
1
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74479
S10-2542-Rev. C, 08-Nov-10
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1051X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.20
10
R DS(on) - On-Resistance ( )
I S - Source Current (A)
ID = 1.2 A
1
TJ = 25 °C
TJ = 150 °C
0.1
0.01
0.0
0.15
TA = 125 °C
0.10
TA = 25 °C
0.05
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
5
0.8
0.7
4
ID = 250 µA
0.6
Power (W)
V GS(th) Variance (V)
2
0.5
3
2
0.4
1
0.3
0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
10
Limited
by R DS(on)*
1 ms
I D - Drain Current (A)
10 ms
1
100 ms
1s
0.1
10 s
DC
0.01
TA = 25 °C
Single Pulse
0.001
0.1
* VGS
1
10
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74479
S10-2542-Rev. C, 08-Nov-10
Si1051X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.01
Notes:
0.02
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
0.001
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.0001
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74479.
Document Number: 74479
S10-2542-Rev. C, 08-Nov-10
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Revision: 01-Jan-2022
1
Document Number: 91000