SI1056X-T1-GE3

Si1056X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V 1.13 Qg (Typ.) 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D D 2 5 D 4 S S XX YY Marking Code Lot Traceability and Date Code G 3 Part # Code Top View Ordering Information: Si1056X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Symbol VDS VGS TA = 25 °C TA = 70 °C ID L = 0.1 mH IDM IAS EAS IS TA = 25 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Limit 20 ±8 Unit V 1.32b, c 1.05b, c 6 8 3.2 A mJ A 0.2b, c 0.236b, c 0.151b, c - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t 5 s Steady State RthJA Typical 440 540 Maximum 530 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73895 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 1 Si1056X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr mV/°C - 2.71 0.35 0.95 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C 10 VDS =  5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.32 A 6 µA A 0.074 0.089 VGS = 2.5 V, ID = 1.26 A 0.082 0.098 VGS = 1.8 V, ID = 1.13 A 0.093 0.121 VDS = 10 V, ID = 1.32 A 7.5  S 400 VDS = 10 V, VGS = 0 V, f = 1 MHz 70 pF 40 VDS = 10 V, VGS = 5 V, ID = 1.32 A VDS = 10 V, VGS = 4.5 V, ID = 1.32 A 5.8 8.7 5.2 7.8 0.83 nC 0.71 f = 1 MHz td(on) td(off) V 18.2 VDD = 10 V, RL = 9.52  ID  1.05 A, VGEN = 4.5 V, Rg = 1  tf  3.8 5.7 6.8 10.2 19 28.5 18 27 6 9 0.8 1.2 V 10.0 15 nC 3.5 5.3 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 6 IS = 1.0 A IF = 1.0 A, dI/dt = 100 A/µs 6.6 A ns 3.4 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73895 S10-2542-Rev. D, 08-Nov-10 Si1056X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 2.4 VGS = 5 V thru 2 V 2.1 1.8 4 I D - Drain Current (A) I D - Drain Current (A) 5 VGS = 1.5 V 3 2 1.5 1.2 TJ = 125 °C 0.9 0.6 TJ = 25 °C 1 0.3 VGS = 1.0 V TJ = - 55 °C 0 0.0 0.6 1.2 1.8 0.0 0.0 2.4 0.4 VDS - Drain-to-Source Voltage (V) 1.6 2.0 VGS - Gate-to-Source Voltage (V) 0.15 800 0.12 600 C - Capacitance (pF) R DS(on) - On-Resistance (W) 1.2 Transfer Characteristics Curves vs. Temperature Output Characteristics VGS = 1.8 V 0.8 VGS = 2.5 V 0.09 VGS = 4.5 V Ciss 400 200 0.06 Coss Crss 0 0.03 0 1 2 3 4 5 0 6 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 5 1.8 1.6 4 VDS = 10 V 3 VGS = 16 V 2 1 VGS = 4.5 V, ID = 1.3 A VGS = 2.5 V, ID = 1.2 A 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 1.3 A 1.2 VGS = 1.8 V, ID = 1.1 A 1.0 0.8 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Qg - Gate Charge Document Number: 73895 S10-2542-Rev. D, 08-Nov-10 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1056X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.20 10 R DS(on) - On-Resistance (W) I D = 1.3 A I S - Source Current (A) 1 TJ = 25 °C TJ = 150 °C 0.1 0.01 0.001 0.0 0.15 0.10 TA = 125 °C 0.05 TA = 25 °C 0.00 0.2 0.6 0.4 0.8 0 1.0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 5 5.0 1.0 4.0 0.8 Power (W) VGS(th) (V) ID = 250 µA 0.6 3.0 2.0 0.4 1.0 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature ( °C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 Limited by RDS(on)* 1 ms I D - Drain Current (A) 1 10 ms 100 ms 0.1 1s 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73895 S10-2542-Rev. D, 08-Nov-10 Si1056X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: 0.01 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 0.001 3. TJM - TA = PDMZthJA(t) Single Pulse 0.0001 10-4 4. Surface Mounted 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73895. Document Number: 73895 S10-2542-Rev. 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