Si1062X
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
SC-89 (3 leads)
• TrenchFET® power MOSFET
D
3
• Gate-source ESD protected: 1000 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
2
S
D
• Load / power switching for portable
devices
1
G
Top View
• Drivers: relays, solenoids, lamps,
hammers, displays, memories
Marking code: J
• Battery operated systems
G
• Power supply converter circuits
PRODUCT SUMMARY
VDS (V)
20
RDS(on) max. () at VGS = 4.5 V
0.420
RDS(on) max. () at VGS = 2.5 V
0.492
RDS(on) max. () at VGS = 1.8 V
0.597
RDS(on) max. () at VGS = 1.5 V
Qg typ. (nC)
ID (A)
Configuration
S
N-Channel MOSFET
0.762
1
0.53
Single
ORDERING INFORMATION
Package
SC-89
Lead (Pb)-free and halogen-free
Si1062X-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
20
Gate-source voltage
VGS
±8
Continuous drain current (TJ = 150 °C) a
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
Continuous source-drain diode current
Maximum power dissipation a
TA = 25 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
UNIT
V
0.53 a, b
ID
0.43 a, b
IDM
2
IS
0.18 a, b
A
0.22 a, b
PD
W
0.14 a, b
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
SYMBOL
t5s
Steady state
RthJA
TYP.
MAX.
440
530
540
650
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 5 s
S12-2732-Rev. B, 12-Nov-12
Document Number: 62661
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1062X
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
11
-
-
-1.8
-
Static
Drain-source breakdown voltage
VDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
0.4
-
1
VDS = 0 V, VGS = ± 8 V
-
-
± 30
Gate-source leakage
IGSS
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance a
Forward transconductance
IDSS
ID(on)
RDS(on)
gfs
VDS = 0 V, VGS = ± 4.5 V
-
-
±1
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
-
-
10
VDS = 5 V, VGS = 4.5 V
2
-
-
VGS = 4.5 V, ID = 0.5 A
-
0.350
0.420
VGS = 2.5 V, ID = 0.2 A
-
0.410
0.492
VGS = 1.8 V, ID = 0.2 A
-
0.459
0.597
VGS = 1.5 V, ID = 0.05 A
-
0.510
0.762
VDS = 10 V, ID = 0.5 A
-
7.5
-
-
43
-
-
14
-
-
8
-
mV/°C
V
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Rg
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 8 V, ID = 0.5 A
VDS = 10 V, VGS = 4.5 V, ID = 0.5 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 10 V, RL = 20 ,
ID 0.4 A, VGEN = 4.5 V, Rg = 1
tf
-
1.8
2.7
-
1
2
-
0.16
-
-
0.13
-
pF
nC
-
12.2
-
-
2
4
-
14
24
-
16
30
-
11
20
-
-
2
-
0.8
1.2
V
-
10
15
ns
-
2
4
nC
-
5
-
-
5
-
ns
Drain-Source Body Diode Characteristics
Pulse diode forward current a
Body diode voltage
ISM
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
IS = 0.4 A
IF = 0.4 A, di/dt = 100 A/μs
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2732-Rev. B, 12-Nov-12
Document Number: 62661
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1062X
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-4
10-5
0.6
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.8
0.4
TJ = 25 °C
0.2
TJ = 150 °C
10-6
TJ = 25 °C
10-7
10-8
0
0
2
4
6
8
10
VGS - Gate-Source Voltage (V)
12
14
10-9
0
4
7
11
VGS - Gate-to-Source Voltage (V)
14
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
0.5
2
VGS = 5 V thru 2 V
0.4
ID - Drain Current (A)
ID - Drain Current (A)
1.5
VGS = 1.5 V
1
0.3
TC = 25 °C
0.2
0.5
0.1
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
2
0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.8
60
0.6
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
45
VGS = 1.8 V
VGS = 1.5 V
VGS = 2.5 V
VGS = 4.5 V
0.4
30
Coss
15
Crss
0.2
0
0
0.5
1
1.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-2732-Rev. B, 12-Nov-12
2
0
5
10
15
VDS - Drain-to-Source Voltage (V)
20
Capacitance
Document Number: 62661
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1062X
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.7
8
ID = 0.5 A
6
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.5 A
VDS = 10 V
VDS = 5 V
4
VDS = 16 V
2
0.5
1
1.5
1.3
1.1
0.9
0.7
- 50
0
0
VGS = 4.5 V, 2.5 V
1.5
2
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.8
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.5 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.65
TJ = 125
0.5
TJ = 25 °C
0.35
0.2
0.0
0.3
0.6
0.9
1.2
0
VSD - Source-to-Drain Voltage (V)
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.7
10
ID = 250 μA
8
Power (W)
VGS(th) (V)
0.6
0.5
6
4
0.4
2
0.3
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
S12-2732-Rev. B, 12-Nov-12
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Document Number: 62661
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1062X
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
100 μs
Limited by RDS(on)*
0.18
1 ms
Power (W)
ID - Drain Current (A)
1
0.24
10 ms
0.1
100 ms
0.12
1s
0.01
DC, 10 s
TA = 25 °C
Single Pulse
0.06
BVDSS Limited
0.001
0.1
0
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
Safe Operating Area, Junction-to-Ambient
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62661.
S12-2732-Rev. B, 12-Nov-12
Document Number: 62661
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SC89Ć3
X
E
D
A
C
H
L
DETAIL X
3
MILLIMETERS
1
2
e1
b
e
INCHES
Dim
A
Min
Max
Min
Max
0.60
0.80
0.024
0.031
b
0.23
0.33
0.009
0.013
C
D
E
e
e1
H
L
0.10
0.20
0.004
0.008
1.50
1.70
0.059
0.067
0.75
0.95
0.030
0.037
1.00 BSC
0.50 BSC
0.040 BSC
0.020 BSC
1.50
1.70
0.059
0.067
0.30
0.50
0.012
0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Document Number: 71377
06-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead
(0.38 )
)
0.0170
0.0260
(0.43 )
)
0.0150
(0.51)
)
(0.66 )
)
0.0200
(1.75 )
)
0.0690
RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD
0.0250
0.0150
(0.64)
)
(0.38 )
)
0.0550
(1.40 )
)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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20
Document Number: 72604
Revision: 21-Jan-08
Legal Disclaimer Notice
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Revision: 01-Jan-2022
1
Document Number: 91000