SI1065X-T1-GE3

Si1065X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 12 ID (A) 0.156 at VGS = - 4.5 V 1.18 0.190 at VGS = - 2.5V 1.07 0.245 at VGS = - 1.8V 0.49 • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 6.7 nC APPLICATIONS • Load Switch for Portable Devices SC-89 (3-LEADS) S 1 6 D D 2 5 D G 3 4 S Marking Code W XX YY D Lot Traceability and Date Code G Part # Code Top View D P-Channel MOSFET Ordering Information: Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C Maximum Power Dissipationa TA = 70 °C V - 1.18b, c ID - 0.94b, c IDM -8 IS - 0.2b, c A 0.236b, c PD W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambienta, b Steady State State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Document Number: 74320 S12-1619-Rev. D, 09-Jul-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1065X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea mV/°C 2.33 - 0.45 - 0.95 V VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 12 V, VGS = 0 V -1 nA - 10 µA VDS = - 12 V, VGS = 0 V, TJ = 85 °C ID(on) VDS =  5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.18 A 0.108 0.156 RDS(on) VGS = - 2.5 V, ID = - 1.07 A 0.131 0.190 VGS = - 1.8 V, ID = - 0.49 A 0.158 0.245 VDS = - 6 V, ID = - 1.18 A 5.18 gfs Forward Transconductance ID = - 250 µA VDS = VGS, ID = - 250 µA V - 8.47 -8 A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 480 VDS = - 6 V, VGS = 0 V, f = 1 MHz VDS = - 6 V, VGS = - 5 V, ID = - 1.18 A VDS = - 6 V, VGS = - 4.5 V, ID = - 1.18 tr Rise Time td(off) Turn-Off DelayTime f = 1 MHz VDD = - 6 V, RL = 6.32  ID  - 0.95 A, VGEN = - 4.5 V, Rg = 1  tf Fall Time pF 7.2 10.8 6.7 10.1 0.84 nC 2.7 td(on) Turn-On Delay Time 190 145 10 15 13 19.5 27 40.5 45 67.5 27 40.5  ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 8 IS = - 0.63 A IF = - 0.7 A, dI/dt = 100 A/µs A 0.8 1.2 V 29.2 44 nC 10.22 15.3 13.7 ns 15.5 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 74320 S12-1619-Rev. D, 09-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1065X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 8 VGS = 5 V thru 2.5 V I D - Drain Current (A) I D - Drain Current (A) 6 VGS = 2 V 4 2 1.5 TC = 25 °C 1.0 TC = 125 °C 0.5 VGS = 1.5 V TC = - 55 °C VGS = 1.0 V 0 0.0 0.6 1.2 1.8 2.4 0.0 0.0 3.0 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temp. 1000 0.25 VGS = 1.8 V 0.20 800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) VGS = 2.5 V 0.15 VGS = 4.5 V 0.10 0.05 600 Ciss 400 Coss 200 Crss 0.00 0 0 2 4 ID - Drain Current (A) 6 0 8 3 On-Resistance vs. Drain Current 9 12 Capacitance 5 1.4 VGS = 4.5 V, ID = 1.18 A R DS(on) - On-Resistance (Normalized) ID = 1.18 A VGS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 4 VDS = 6 V 3 2 VDS = 9.6 V 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74320 S12-1619-Rev. D, 09-Jul-12 8 1.3 VGS = 2.5 V, ID = 1.07 A 1.2 1.1 1.0 VGS = 1.8 V, ID = 0.94 A 0.9 0.8 - 50 - 25 0 25 50 75 100 125 VGS - Gate-to-Source Voltage (V) 150 On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1065X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.24 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 10 1 TJ = 150 °C TJ = 25 °C 0.1 0.01 I D = 1.09 A 0.18 TA = 125 °C 0.12 TA = 25 °C 0.06 0.00 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature - 12 0.9 0.8 - 12.5 BVDSS (V) VGS(th) (V) 0.7 ID = 250 µA 0.6 - 13 0.5 - 13.5 0.4 0.3 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 - 14 - 50 - 25 0 25 50 75 100 125 150 Temperature (°C) Threshold Voltage BVDSS vs. Temparture 10 I D - Drain Current (A) Limited by R DS(on)* 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 74320 S12-1619-Rev. D, 09-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1065X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: 0.01 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 0.001 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.0001 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74320. Document Number: 74320 S12-1619-Rev. D, 09-Jul-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000