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SI1067X-T1-GE3

SI1067X-T1-GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT563

  • 描述:

    MOSFET P-CH 20V 1.06A SC89-6

  • 数据手册
  • 价格&库存
SI1067X-T1-GE3 数据手册
Si1067X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6.0 APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) S D 1 6 D 2 5 D G 3 4 S X XX YY D Marking Code Lot Traceability and Date Code G Part # Code D Top View P-Channel MOSFET Ordering Information: Si1067X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa TA = 25 °C TA = 25 °C TA = 70 °C V - 1.06b, c ID - 0.85b, c IDM -8 IS - 0.2b, c A 0.236b, c PD W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Symbol t 5 s Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Document Number: 74322 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 1 Si1067X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 32.07 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.95 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS =  5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.06 A Drain-Source On-State Resistancea RDS(on) Forward Transconductance gfs 3.02 - 0.45 -8 µA A 0.125 0.150 VGS = - 2.5 V, ID = - 1.0 A 0.138 0.166 VGS = - 1.8 V, ID = - 0.49 A 0.165 0.214 VDS = - 10 V, ID = - 1.06 A 4.0  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 375 VDS = - 10 V, VGS = 0 V, f = 1 MHz tr pF VDS = - 10 V, VGS = - 5 V, ID = - 1.06 A 6.5 9.3 6.0 9.1 VDS = - 10 V, VGS = - 4.5 V, ID = - 1.06 A 0.76 nC 2.23 f = 1 MHz td(on) td(off) 82 62 VDD = - 10 V, RL = 19.74  ID  - 0.76 A, VGEN = - 4.5 V, Rg = 1  tf 8.8 13.2 14 21 22 33 48 72 17 25.5  ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 8 IS = - 0.63 A IF = - 0.7 A, dI/dt = 100 A/µs A 0.8 1.2 V 12.8 19.2 nC 4.5 6.8 7.3 ns 5.5 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74322 S10-2542-Rev. D, 08-Nov-10 Si1067X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 8 VGS = 5 V thru 2.5 V I D - Drain Current (A) I D - Drain Current (A) 1.5 VGS = 2 V 6 4 VGS = 1.5 V TC = 25 °C 1.0 TC = 125 °C 0.5 2 TC = - 55 °C VGS = 1.0 V 0 0.0 1.0 2.0 3.0 0.0 0.0 4.0 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temperature 800 0.3 0.24 600 VGS = 1.8 V 0.18 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.4 VGS = 2.5 V 0.12 VGS = 4.5 V Ciss 400 200 0.06 Coss Crss 0 0 0 2 4 6 0 8 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.4 5 VGS = 4.5 V, ID = 1.06 A ID = 1.06 A VGS = 2.5 V, ID = 1.0 A 4 VDS = 10 V 3 2 VDS = 16 V 1.2 (Normalized) R DS(on) - On-Resistance VG S - Gate-to-Source Voltage (V) 12 1.0 VGS = 1.8 V, ID = 0.89 A 0.8 1 0 0 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74322 S10-2542-Rev. D, 08-Nov-10 150 www.vishay.com 3 Si1067X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.28 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) I D = 1.06 A 1 TJ = 150 °C TJ = 25 °C 0.1 0.01 0 0.21 TA = 125 °C 0.14 TA = 25 °C 0.07 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 21 0.8 0.7 - 22 ID = 250 µA BVDSS (V) VGS(th) (V) 0.6 ID = 250 µA 0.5 - 23 - 24 0.4 - 25 0.3 0.2 - 50 - 25 0 25 50 75 100 125 - 26 - 50 150 - 25 0 25 50 75 100 TJ - Temperature (°C) Temperature (°C) Threshold Voltage BVDSS vs. Temperature 125 150 10 Limited by R DS(on)* I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74322 S10-2542-Rev. D, 08-Nov-10 Si1067X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: 0.01 PDM t1 t2 1. Duty Cycle, D = 0.001 t1 t2 2. Per Unit Base = RthJA = 540 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74322. Document Number: 74322 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
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