Si1069X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.184 at VGS = - 4.5 V
- 0.94
0.268 at VGS = - 2.5 V
- 0.78
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.23
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
S
D
1
6
D
D
5
2
D
Y
XX
YY
Marking Code
G
Lot Traceability
and Date Code
G
3
4
S
Part # Code
Top View
D
P-Channel MOSFET
Ordering Information: Si1069X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
TA = 25 °C
TA = 25 °C
TA = 70 °C
V
- 0.94b, c
ID
- 0.75b, c
IDM
-8
IS
- 0.2b, c
A
0.236b, c
PD
W
0.151b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Based on TA = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 70442
S19-0207-Rev. D, 04-Mar-2019
www.vishay.com
1
Si1069X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 16.7
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
µA
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
µA
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistancea
ID(on)
RDS(on)
Forward Transconductance
gfs
VDS = 5 V, VGS = - 4.5 V
2.95
- 0.6
- 1.5
-8
V
A
VGS = - 4.5 V, ID = - 0.94 A
0.153
0.184
VGS = - 2.5 V, ID = - 0.78 A
0.218
0.268
VDS = - 10 V, ID = - 0.94 A
4
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
308
VDS = - 10 V, VGS = 0 V, f = 1 MHz
78
VDS = - 10 V, VGS = - 5 V, ID = - 0.94 A
4.57
6.86
4.23
6.35
59
VDS = - 10 V, VGS = - 4.5 V, ID = - 0.94 A
td(off)
0.71
nC
1.67
f = 1 MHz
td(on)
tr
pF
VDD = - 10 V, RL = 13.3
ID - 0.75 A, VGEN = - 4.5 V, Rg = 1
tf
9
13.5
19
28.5
31
47
23
34.5
7
10.5
8
A
- 0.8
- 1.2
V
nC
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = - 0.64 A
Body Diode Reverse Recovery Time
trr
19
28.5
Body Diode Reverse Recovery Charge
Qrr
6.65
10
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 0.64 A, dI/dt = 100 A/µs
7
ns
12
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70442
S19-0207-Rev. D, 04-Mar-2019
Si1069X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
3.0
VGS = 3 V
VGS = 5 V thru 3.5 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
6
VGS = 2.5 V
4
2
VGS = 2 V
1.8
1.2
TC = 25 °C
0.6
TC = 125 °C
TC = - 55 °C
0.0
0.0
0
0
1
2
3
4
5
0.6
1.8
2.4
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
600
0.5
500
0.4
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.2
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
400
Ciss
300
200
Coss
0.1
100
Crss
0
0.0
0
2
4
6
0
8
4
ID - Drain Current (A)
8
On-Resistance vs. Drain Current
16
20
Capacitance
1.6
5
ID = 0.94 A
VGS = 4.5 V, ID = 0.94 A
1.4
4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS - Drain-to-Source Voltage (V)
VDS = 10 V
3
VDS = 16 V
2
1.2
VGS = 2.5 V, ID = 0.78 A
1.0
0.8
1
0
0
1
2
3
4
5
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70442
S19-0207-Rev. D, 04-Mar-2019
150
www.vishay.com
3
Si1069X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.4
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 0.94 A
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.0
0.3
0.2
TA = 125 °C
0.1
TA = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
5
1.3
1.2
4
ID = 250 µA
Power (W)
VGS(th) (V)
1.1
1.0
3
2
0.9
1
0.8
0.7
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
10
Limited by RDS(on)*
ID - Drain Current (A)
1
10 ms
100 ms
1
1s
10 s
0.1
DC
0.01
TA = 25 °C
Single Pulse
0.001
0.1
BVDSS Limited
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 70442
S19-0207-Rev. D, 04-Mar-2019
Si1069X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.01
Notes:
0.02
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
0.001
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.0001
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70442.
Document Number: 70442
S19-0207-Rev. D, 04-Mar-2019
www.vishay.com
5
Package Information
www.vishay.com
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
E1/2
2
3
aaa
D
e1
4
C
2x
4
A
B
D
6
5
4
SECTION B-B
C
E/2
2
E
E1
3
6
2x
DETAIL “A”
aaa
C
1
5
2
2x
3
bbb
C
e
B
6x b
4
ddd
M
C
A–B D
L1
A1
L
A
A1
SEE DETAIL “A”
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Revision: 11-Aug-14
DIM.
MILLIMETERS
MIN.
NOM.
A
0.56
0.58
MAX.
0.60
A1
0
0.02
0.10
b
0.15
0.22
0.30
0.18
c
0.10
0.14
D
1.50
1.60
1.70
E
1.50
1.60
1.70
1.25
E1
1.15
1.20
e
0.45
0.50
0.55
e1
0.95
1.00
1.05
L
0.25
0.35
0.50
L1
0.10
0.20
0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Document Number: 71612
1
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
www.vishay.com
21
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
