SI1073X-T1-GE3

Si1073X Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 3.25 APPLICATIONS • Load Switch SC-89 (6-LEADS) S 1 6 D D 2 5 D G 3 4 S Marking Code 1 XX YY D G Lot Traceability and Date Code Part # Code Top View D P-Channel MOSFET Ordering Information: Si1073X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 25 °C TA = 70 °C - 0.78b, c A -8 IAS -6 EAS 1.8 mJ b, c IS A 0.2 0.236b, c PD W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range V - 0.98b, c ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t 5 s Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 74285 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 1 Si1073X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 30.7 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -3 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 85 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs VDS =  5 V, VGS = - 10 V 3.78 -1 -8 µA A VGS = - 10 V, ID = - 0.98 A 0.144 0.173 VGS = - 4.5 V, ID = - 0.83 A 0.202 0.243 VDS = - 15 V, ID = - 0.98 A 3.52  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 265 VDS = - 15 V, VGS = 0 V, f = 1 MHz 51 VDS = - 15 V, VGS = - 4.5 V, ID = - 0.98 A 3.25 4.88 6.3 9.45 39 VDS = - 15 V, VGS = - 10 V, ID = - 0.98 A td(off) 1.02 nC 1.47 f = 1 MHz td(on) tr pF VDD = - 15 V, RL = 19.2  ID  - 0.78 A, VGEN = - 10 V, Rg = 1  14 21 6 9 10 15  14 21 tf 6 9 td(on) 26 39 28 42 28 42 12 18 0.8 1.2 V 14.3 21.45 nC 12.16 18.25 tr td(off) VDD = - 15 V, RL = 22.72  ID  - 0.66 A, VGEN = - 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 8 IS = - 0.63 A IF = - 0.7 A, dI/dt = 100 A/µs 11.1 A ns 3.2 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74285 S10-2542-Rev. D, 08-Nov-10 Si1073X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 8 3 TC = 125 °C 25 °C I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 5 V 6 VGS = 4 V 4 2 1 2 VGS = 3 V 0 0.0 TC = - 55 °C 0 0.6 1.2 1.8 2.4 3.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 Transfer Characteristics Curves vs. Temp. 0.40 500 0.32 400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Output Characteristics 0.24 VGS = 4.5 V 0.16 300 Ciss 200 Coss VGS = 10 V 0.08 2 VGS - Gate-to-Source Voltage (V) 100 Crss 0.00 0 0 2 4 6 8 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.6 ID = 0.94 A 8 VGS = 10 V ID = 0.94 A 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 VDS = 15 V 6 VDS = 24 V 4 2 1.2 VGS = 4.5 V ID = 0.83 A 1.0 0.8 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74285 S10-2542-Rev. D, 08-Nov-10 6 7 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1073X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.24 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 0.94 A 1 TJ = 25 °C TJ = 150 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.20 T A = 125 °C 0.16 0.12 T A = 25 °C 0.08 1.4 0 VSD - Source-to-Drain Voltage (V) 2.4 10 2.2 8 2.0 ID = 250 µA 1.8 6 4 2 1.6 1.4 - 50 10 RDS(on) vs. VGS vs. Temperature Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 10 100 µs I D - Drain Current (A) Limited by R DS(on)* 1 ms 1 10 ms 100 ms 0.1 1s 10 s 0.01 DC TA = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74285 S10-2542-Rev. D, 08-Nov-10 Si1073X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: 0.01 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 0.001 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.0001 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74285. Document Number: 74285 S10-2542-Rev. 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