Si1303EDL
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
VDS (V)
–20
20
rDS(on) ()
ID (A)
0.430 @ VGS = –4.5 V
0.72
0.480 @ VGS = –3.6 V
0.68
0.700 @ VGS = –2.5 V
0.56
SOT-323
SC-70 (3-LEADS)
G
1
3
LD
D
XX
YY
Marking Code
Lot Traceability
and Date Code
S
2
Part # Code
Top View
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150C)
150 C)a
TA = 25C
ID
TA = 70C
Pulsed Drain Current
IS
TA = 25C
Maximum Power Dissipationa
TA = 70C
Operating Junction and Storage Temperature Range
PD
V
0.67
0.72
0.58
0.54
A
2.5
IDM
Continuous Diode Current (Diode Conduction)a
Unit
–0.28
–0.24
0.34
0.29
0.22
0.19
W
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 5 sec
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
315
375
360
430
285
340
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71094
S-99400—Rev. A, 29-Nov-99
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Si1303DL
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–0.6
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
a
D i S
Drain-Source
On-State
O S
Resistance
R i
"1
VDS = –20 V, VGS = 0 V
–1
VDS = –20 V, VGS = 0 V, TJ = 70C
–5
mA
mA
–2.5
A
VGS = –4.5 V, ID = –1 A
0.360
0.430
VGS = –3.6 V, ID = –0.7 A
0.400
0.480
VGS = –2.5 V, ID = –0.3 A
0.560
0.700
gfs
VDS = –10 V, ID = –1 A
1.7
VSD
IS = –1 A, VGS = 0 V
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "4.5 V
VDS = –5 V, VGS = –4.5 V
rDS(on)
Voltagea
V
W
S
–1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.44
Turn-On Delay Time
td(on)
180
300
tr
410
655
560
900
530
850
435
700
Rise Time
Turn-Off Delay Time
1.9
VDS = –10
10 V
V, VGS = –4.5
4 5 V,
V ID = –1
1A
VDD = –10
10 V
V,, RL = 10 W
ID ^ –1
1 A,
A VGEN = –4.5
45V
V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
2.5
nC
C
0.45
IF = –1 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
$# $# !#! "# "
! " ! !#! "# "
6
6
VGS = 4.5 V
4V
25C
3.5 V
4
3V
3
2.5 V
2
TC = –55C
5
I D – Drain Current (A)
I D – Drain Current (A)
5
2V
1
4
3
125C
2
1
1, 1.5 V
0
0
0
2
4
6
VDS – Drain-to-Source Voltage (V)
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2
8
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS – Gate-to-Source Voltage (V)
Document Number: 71094
Pending—Rev. A, 09-Nov-99
Si1303EDL
New Product
Vishay Siliconix
% (#
250
1.6
200
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
#, ' '(# *' & # )&& #(
2.0
VGS = 2.5 V
1.2
0.8
Ciss
150
100
VGS = 3.6 V
Coss
0.4
50
VGS = 4.5 V
Crss
0
0
0
1
2
3
4
5
6
0
4
ID – Drain Current (A)
16
20
#, ' '(# *' )#( $# "% &()&
( &
1.6
VDS = 10 V
ID = 1 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
12
VDS – Drain-to-Source Voltage (V)
12
9
6
3
0
0
1
2
3
4
VGS = 4.5 V
ID = 1 A
1.2
0.8
0.4
0
–50
5
–25
Qg – Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
$)& , & # $ $&+& $!(
#, ' '(# *' ( ,($,$)& $!(
2.5
10
r DS(on) – On-Resistance ( )
TJ = 150C
I S – Source Current (A)
8
1
0.1
TJ = 25C
0.01
2.0
ID = 1 A
1.5
1.0
0.5
0
0.001
0
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
Document Number: 71094
Pending—Rev. A, 09-Nov-99
1.5
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
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Si1303DL
New Product
Vishay Siliconix
) - *'' $) +( ) -%*' %")
Gate-Source Voltage vs. Gate-Current
1600
4000
1000
100
10
IG ( m A)
IGSS ( m A)
1200
800
IGSS (mA) @ T = 25C
1
IG (mA) @ 150C
0.1
400
0.01
IG (mA) @ 25C
0.001
0
0.0001
0
3
6
9
12
0.1
VGS – Gate-to-Source Voltage (v)
1
20
100
600
VGS – Gate-to-Source Voltage (v)
' ( %" %")
Single Pulse Power
0.4
20
0.3
16
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
10
0.1
12
TA = 25C
8
0.0
4
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
10–3
10–2
10–1
TJ – Temperature (C)
1
10
Time (sec)
%'#"!, '#" '$(! $) #& $ *$ )!%$-)%-#! $)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 360C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
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4
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71094
Pending—Rev. A, 09-Nov-99
Si1303EDL
New Product
Vishay Siliconix
!# ' # # $ %
" & % ! (%!( !!%
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
Document Number: 71094
Pending—Rev. A, 09-Nov-99
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
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Vishay
Disclaimer
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Document Number: 91000
Revision: 18-Jul-08
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