SI1305DL-T1-E3

Si1305DL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • TrenchFET® Power MOSFET: 1.8 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-323 SC-70 (3-LEADS) G 1 D LB S X YY Marking Code 3 Lot Traceability and Date Code 2 Part # Code Top View Ordering Information: Si1305DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Continuous Diode Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 70 °C PD - 0.86 - 0.74 - 0.69 A -3 - 0,28 - 0.24 0.34 0.29 0.22 0.19 TJ, Tstg Operating Junction and Storage Temperature Range V - 0.92 IDM Pulsed Drain Current Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Symbol t5s Maximum Junction-to-Ambienta Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 315 375 360 430 285 340 Unit °C/W Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71076 S13-0631-Rev. G, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1305DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. - 0.45 Max. Unit nA Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 IDSS VDS = - 8 V, VGS = 0 V -1 Zero Gate Voltage Drain Current VDS = - 8 V, VGS = 0 V, TJ = 70 °C -5 On-State Drain Currenta ID(on) VDS -5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A 0.230 0.280 RDS(on) VGS = - 2.5 V, ID = - 0.5 A 0.315 0.380 VGS = - 1.8 V, ID = - 0.3 A 0.440 0.530 gfs VDS = - 5 V, ID = - 1 A 3.5 VSD IS = - 0.3 A, VGS = 0 V Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V µA -3 A  S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time 2.6 VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.6 nC 0.5 tr Turn-Off Delay Time 4 8 15 VDD = - 4 V, RL = 4  ID  - 1 A, VGEN = - 4.5 V, Rg = 6  55 80 17 25 12 20 IF = - 1 A, dI/dt = 100 A/µs 27 45 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 8 VGS = 4.5 V 4V TC = - 55 °C 5 3.5 V 25 °C 6 ID - Drain Current (A) ID - Drain Current (A) 3V 2.5 V 4 2V 2 1.5 V 4 125 °C 3 2 1 1V 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics For technical questions, contact: pmostechsupport@vishay.com Document Number: 71076 S13-0631-Rev. G, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 350 1.4 300 VGS = 1.8 V 1.0 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.2 0.8 0.6 0.4 Ciss 250 200 Coss 150 Crss 100 VGS = 4.5 V 50 0.2 0 0.0 0 1 2 3 4 5 6 7 0 2 ID - Drain Current (A) 4 Capacitance 1.6 8 VDS = 4 V ID = 1 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 4 2 0 1 2 3 VGS = 4.5 V ID = 1 A 1.2 0.8 0.4 0.0 - 50 0 4 - 25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 1.0 10 TJ = 150 °C 0.8 RDS(on) - On-Resistance (Ω) 1 0.1 TJ = 25 °C 0.01 0.001 0.0 0 TJ - Junction Temperature (°C) Gate Charge IS - Source Current (A) 6 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71076 S13-0631-Rev. G, 25-Mar-13 1.2 ID = 1 A 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 20 0.3 16 0.2 Power (W) VGS(th) Variance (V) ID = 250 µA 0.1 12 TA = 25 °C 8 0.0 4 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 360 °C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71076. www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71076 S13-0631-Rev. G, 25-Mar-13 This document is subject to change without notice. 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