Si1305DL
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) ()
ID (A)
0.280 at VGS = - 4.5 V
- 0.92
0.380 at VGS = - 2.5 V
- 0.79
0.530 at VGS = - 1.8 V
- 0.67
• TrenchFET® Power MOSFET: 1.8 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SOT-323
SC-70 (3-LEADS)
G
1
D
LB
S
X
YY
Marking Code
3
Lot Traceability
and Date Code
2
Part # Code
Top View
Ordering Information: Si1305DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Continuous Diode Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 70 °C
PD
- 0.86
- 0.74
- 0.69
A
-3
- 0,28
- 0.24
0.34
0.29
0.22
0.19
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 0.92
IDM
Pulsed Drain Current
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t5s
Maximum Junction-to-Ambienta
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
315
375
360
430
285
340
Unit
°C/W
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71076
S13-0631-Rev. G, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1305DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
- 0.45
Max.
Unit
nA
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
IDSS
VDS = - 8 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
VDS = - 8 V, VGS = 0 V, TJ = 70 °C
-5
On-State Drain Currenta
ID(on)
VDS -5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1 A
0.230
0.280
RDS(on)
VGS = - 2.5 V, ID = - 0.5 A
0.315
0.380
VGS = - 1.8 V, ID = - 0.3 A
0.440
0.530
gfs
VDS = - 5 V, ID = - 1 A
3.5
VSD
IS = - 0.3 A, VGS = 0 V
Gate Threshold Voltage
Drain-Source On-State
Resistancea
Forward Transconductancea
Diode Forward Voltage
a
V
µA
-3
A
S
- 1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
2.6
VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
0.6
nC
0.5
tr
Turn-Off Delay Time
4
8
15
VDD = - 4 V, RL = 4
ID - 1 A, VGEN = - 4.5 V, Rg = 6
55
80
17
25
12
20
IF = - 1 A, dI/dt = 100 A/µs
27
45
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
8
VGS = 4.5 V
4V
TC = - 55 °C
5
3.5 V
25 °C
6
ID - Drain Current (A)
ID - Drain Current (A)
3V
2.5 V
4
2V
2
1.5 V
4
125 °C
3
2
1
1V
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71076
S13-0631-Rev. G, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
350
1.4
300
VGS = 1.8 V
1.0
VGS = 2.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.2
0.8
0.6
0.4
Ciss
250
200
Coss
150
Crss
100
VGS = 4.5 V
50
0.2
0
0.0
0
1
2
3
4
5
6
7
0
2
ID - Drain Current (A)
4
Capacitance
1.6
8
VDS = 4 V
ID = 1 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
4
2
0
1
2
3
VGS = 4.5 V
ID = 1 A
1.2
0.8
0.4
0.0
- 50
0
4
- 25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
1.0
10
TJ = 150 °C
0.8
RDS(on) - On-Resistance (Ω)
1
0.1
TJ = 25 °C
0.01
0.001
0.0
0
TJ - Junction Temperature (°C)
Gate Charge
IS - Source Current (A)
6
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71076
S13-0631-Rev. G, 25-Mar-13
1.2
ID = 1 A
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.4
20
0.3
16
0.2
Power (W)
VGS(th) Variance (V)
ID = 250 µA
0.1
12
TA = 25 °C
8
0.0
4
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
10-3
10-2
10-1
TJ - Temperature (°C)
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 360 °C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71076.
www.vishay.com
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71076
S13-0631-Rev. G, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
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Document Number: 91000