Si1305EDL
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) (Ω)
ID (A)
0.280 at VGS = - 4.5 V
± 0.92
0.380 at VGS = - 2.5 V
± 0.79
0.530 at VGS = - 1.8 V
± 0.67
• Halogen-free According to IEC 61249-2-21
Definition
• ESD Protection: 3000 V
• Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
G
1
3
LE
D
XX
YY
Marking Code
Lot Traceability
and Date Code
S
2
Part # Code
Top View
Ordering Information: Si1305EDL-T1-E3 (Lead (Pb)-free)
Si1305EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
± 0.92
± 0.86
± 0.69
±3
IS
TA = 25 °C
TA = 70 °C
- 0.28
PD
A
- 0.24
0.34
0.29
0.22
0.19
TJ, Tstg
Operating Junction and Storage Temperature Range
V
± 0.74
IDM
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
315
375
360
430
285
340
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71095
S10-0721-Rev. B, 29-Mar-10
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Si1305EDL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
±1
Zero Gate Voltage Drain Current
IDSS
VDS = - 6.4 V, VGS = 0 V
-1
VDS = - 6.4 V, VGS = 0 V, TJ = 70 °C
-5
On-State Drain Currenta
ID(on)
Gate-Threshold Voltage
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Diode Forward Voltage
VDS - 5 V, VGS = - 4.5 V
a
V
µA
-3
A
VGS = - 4.5 V, ID = - 1 A
0.230
0.280
VGS = - 2.5 V, ID = - 0.5 A
0.315
0.380
0.530
VGS = - 1.8 V, ID = - 0.3 A
0.440
gfs
VDS = - 5 V, ID = - 1 A
3.5
VSD
IS = - 1 A, VGS = 0 V
Ω
S
- 1.2
V
Dynamicb
Total Gate Charge
2.6
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A
tf
Source-Drain Reverse Recovery Time
trr
nC
206
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
td(off)
Fall Time
0.54
0.52
tr
Turn-Off Delay Time
4
IF = - 1 A, dI/dt = 100 A/µs
330
431
690
1350
2160
1000
1600
500
800
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
8
VGS = 4.5 V
TC = - 55 °C
4V
5
3.5 V
I D - Drain Current (A)
I D - Drain Current (A)
6
3V
2.5 V
4
2V
25 °C
125 °C
4
3
2
2
1
1.5 V
1V
0
0
0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71095
S10-0721-Rev. B, 29-Mar-10
Si1305EDL
Vishay Siliconix
1.4
350
1.2
300
1.0
250
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
VGS = 2.5 V
0.6
VGS = 1.8 V
0.4
150
Coss
100
Crss
0.2
50
VGS = 4.5 V
0
0
0
1
2
3
4
5
6
0
7
2
4
6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
8
1.6
8
VGS = 4.5 V
ID = 1 A
VDS = 4 V
ID = 1 A
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
200
4
2
1
2
3
4
0.8
0.4
0
- 50
0
0
1.2
5
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
10
150
1.0
1
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1 A
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.8
0.6
0.4
0.2
0
0.001
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71095
S10-0721-Rev. B, 29-Mar-10
1.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
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Si1305EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
400
100
300
10
IG (µA)
I GSS (µA)
IGSS (µA) at T = 25 °C
200
1
IG (µA) at 150 °C
0.1
0.01
100
IG (µA) at 25 °C
0.001
0
0
2
4
6
0.0001
0.1
8
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-to-Source Voltage
8
Gate-to-Source Voltage vs. Gate Current
20
0.3
0.2
16
ID = 250 µA
0.1
Power (W)
VGS(th) Variance (V)
1
VGS - Gate-to-Source Voltage (V)
0.0
- 0.1
- 0.2
- 50
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4
12
TA = 25 °C
8
4
- 25
0
25
50
75
100
125
150
0
10-3
10-2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
Document Number: 71095
S10-0721-Rev. B, 29-Mar-10
Si1305EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 360 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71095.
Document Number: 71095
S10-0721-Rev. B, 29-Mar-10
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000
