Si1307DL
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) (Ω)
ID (A)
0.290 at VGS = - 4.5 V
± 0.91
0.435 at VGS = - 2.5 V
± 0.74
0.580 at VGS = - 1.8 V
± 0.64
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
1
3
S
LC
XX
D
YY
G
Lot Traceability
and Date Code
Part # Code
2
Top View
Ordering Information: Si1307DL-T1-E3 (Lead (Pb)-free)
Si1307DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
± 0.91
± 0.85
± 0.68
±3
IS
TA = 25 °C
TA = 70 °C
- 0.28
PD
A
- 0.24
0.34
0.29
0.22
0.19
TJ, Tstg
Operating Junction and Storage Temperature Range
V
± 0.72
IDM
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
315
375
360
430
285
340
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71077
S10-0721-Rev. B, 29-Mar-10
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Si1307DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
nA
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = - 9.6 V, VGS = 0 V
-1
VDS = - 9.6 V, VGS = 0 V, TJ = 70 °C
-5
On-State Drain Currenta
ID(on)
Gate-Threshold Voltage
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Diode Forward Voltage
VDS - 5 V, VGS = - 4.5 V
a
V
µA
-3
A
VGS = - 4.5 V, ID = - 1 A
0.240
0.290
VGS = - 2.5 V, ID = - 0.5 A
0.350
0.435
0.580
VGS = - 1.8 V, ID = - 0.3 A
0.480
gfs
VDS = - 5 V, ID = - 1 A
3.5
VSD
IS = - 1 A, VGS = 0 V
Ω
S
- 1.2
V
Dynamicb
Total Gate Charge
3.2
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A
VDD = - 6 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
0.59
nC
0.56
tr
Turn-Off Delay Time
5
IF = - 1 A, dI/dt = 100 A/µs
7.5
12
32
45
17
25
11.5
20
32
52
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
6
4V
TC = - 55 °C
5
3.5 V
6
25 °C
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 4.5 V
3V
4
2.5 V
2V
2
125 °C
4
3
2
1
1.5 V
0.5 V, 1 V
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
0
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71077
S10-0721-Rev. B, 29-Mar-10
Si1307DL
Vishay Siliconix
1.4
400
1.2
350
VGS = 2.5 V
300
1.0
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
0.6
VGS = 1.8 V
0.4
Ciss
250
200
150
Coss
100
VGS = 4.5 V
0.2
50
Crss
0
0
0
1
2
3
4
5
6
7
0
3
6
12
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
8
VGS = 4.5 V
ID = 1 A
VDS = 6 V
ID = 1 A
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
9
4
2
1
2
3
4
0.8
0.4
0
- 50
0
0
1.2
5
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
1.6
10
1
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1 A
TJ = 150 °C
TJ = 25 °C
0.1
0.01
1.2
0.8
0.4
0
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
Document Number: 71077
S10-0721-Rev. B, 29-Mar-10
4.5
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Si1307DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.4
0.3
16
ID = 250 µA
Power (W)
VGS(th) (V)
0.2
0.1
12
TA = 25 °C
8
0.0
4
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 360 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71077.
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Document Number: 71077
S10-0721-Rev. B, 29-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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