Si1400DL
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.150 at VGS = 4.5 V
1.7
0.235 at VGS = 2.5 V
1.3
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
Marking Code
ND
XX
YY
D
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1400DL-T1-E3 (Lead (Pb)-free)
Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Pulsed Drain Current
IS
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
PD
V
1.7
1.6
1.2
1.0
5
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
0.8
A
0.8
0.625
0.568
0.40
0.295
TJ, Tstg
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
165
200
180
220
105
130
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
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Si1400DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.6
Typ.
Max.
Unit
nA
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 85 °C
5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
VDS ≥ 5 V, VGS = 4.5 V
RDS(on)
Forward Transconductancea
Diode Forward Voltagea
V
µA
2
A
VGS = 4.5 V, ID = 1.7 A
0.123
0.150
VGS = 2.5 V, ID = 1.3 A
0.195
0.235
gfs
VDS = 10 V, ID = 1.7 A
5
VSD
IS = 0.8 A, VGS = 0 V
0.78
1.1
2.1
4.0
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
0.3
Gate-Drain Charge
Qgd
0.4
Turn-On Delay Time
td(on)
10
Rise Time
VDD = 10 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 0.8 A, dI/dt = 100 A/µs
nC
17
30
50
14
25
8
15
30
50
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
5
2.5 V
VGS = 4.5 V thru 3 V
4
I D - Drain Current (A)
I D - Drain Current (A)
4
3
2
2V
1
3
2
TC = 125 °C
1
25 °C
- 55 °C
1.5 V
0
0
0
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2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
Si1400DL
Vishay Siliconix
0.5
300
0.4
240
0.3
VGS = 2.5 V
0.2
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 4.5 V
180
120
Coss
0.1
60
Crss
0
0
0
1
2
3
4
5
0
4
ID - Drain Current (A)
8
20
Capacitance
1.8
4.5
VDS = 10 V
ID = 1.7 A
VGS = 4.5 V
ID = 1.7 A
1.6
3.6
2.7
1.8
0.9
1.4
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.2
1.0
0.8
0.6
- 50
0
0
0.5
1.0
1.5
2.0
2.5
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.40
R DS(on) - On-Resistance (Ω)
10
I S - Source Current (A)
12
TJ = 150 °C
1
TJ = 25 °C
0.32
0.24
ID = 1.7 A
0.16
0.08
0
0.1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si1400DL
Vishay Siliconix
0.4
10
0.2
8
ID = 250 µA
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0
- 0.2
- 0.4
6
4
2
- 0.6
- 50
- 25
0
25
50
75
100
125
0
0.01
150
1
0.1
TJ - Temperature (°C)
10
30
Time (s)
Threshold Voltage
Single Pulse Power
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 400 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71179.
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Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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