Si1402DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.077 at VGS = 4.5 V
3.4
0.120 at VGS = 2.5 V
2.5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
SOT-363
SC-70 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
Marking Code
AE
XX
YY
D
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1402DH-T1-E3 (Lead (Pb)-free)
Si1402DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
IS
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
PD
V
3.4
2.7
2.7
2.2
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
8
1.2
0.8
1.45
0.95
0.94
0.6
TJ, Tstg
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
65
85
87
130
40
50
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 73328
S-10-0645-Rev. B, 22-Mar-10
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Si1402DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.6
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
V
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 4.5 V
RDS(on)
1.6
± 100
4
µA
A
VGS = 4.5 V, ID = 3.0 A
0.064
0.077
VGS = 2.5 V, ID = 2.0 A
0.095
0.120
gfs
VDS = 5 V, ID = 3.0 A
10
VSD
IS = 1.05 A, VGS = 0 V
0.80
1.1
3
4.5
VDS = 15 V, VGS = 4.5 V, ID = 2.0 A
0.6
f = 1.0 MHz
2.4
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
1.0
td(on)
tr
td(off)
nC
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Ω
5
8
12
23
13
23
Fall Time
tf
7
12
Source-Drain Reverse Recovery Time
trr
15
25
Reverse Recovery Charge
Qrr
7.5
12
IF = 1.05 A, dI/dt = 100 A/µs
ns
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73328
S-10-0645-Rev. B, 22-Mar-10
Si1402DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
8
7
VGS = 5 V thru 2.5 V
6
6
I D - Drain Current (A)
I D - Drain Current (A)
7
5
4
3
2V
5
4
3
2
2
1
1
TC = 125 °C
25 °C
- 55 °C
1.5 V
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
2.0
2.5
3.0
Transfer Characteristics
0.5
450
0.4
360
C - Capacitance (pF)
Ciss
0.3
0.2
270
180
VGS = 2.5 V
90
0.1
Coss
VGS = 4.5 V
Crss
0
0.0
0
2
4
6
8
0
10
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
6
1.8
VDS = 15 V
ID = 2 A
VGS = 4.5 V
ID = 3 A
1.6
4
3
2
1
1.4
(Normalized)
5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
R DS(on) - On-Resistance (Ω)
1.0
1.2
1.0
0.8
0
0
1
2
3
4
5
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73328
S-10-0645-Rev. B, 22-Mar-10
150
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Si1402DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.25
TJ = 25 °C
TJ = 150 °C
1
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 3 A
0.20
0.15
0.10
0.05
0.00
0.1
0
0.3
0.6
1.2
0.9
1.5
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
8
ID = 250 µA
0.2
0.0
Power (W)
V GS(th) Variance (V)
6
- 0.2
4
2
- 0.4
- 0.6
- 50
0
- 25
0
25
50
75
100
125
150
0.1
0.01
TJ - Temperature (°C)
1
10
30
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
IDM Limited
I D - Drain Current (A)
10
Limited by RDS(on)*
100 µs
1
1 ms
ID(on)
Limited
0.1
10 ms
TC = 25 °C
Single Pulse
100 ms
10 s, 1 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 73328
S-10-0645-Rev. B, 22-Mar-10
Si1402DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
100
10
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73328.
Document Number: 73328
S-10-0645-Rev. B, 22-Mar-10
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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