Si1404BDH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.238 at VGS = 4.5 V
1.9
0.380 at VGS = 2.5 V
1.51
VDS (V)
30
Qg (Typ.)
1.1 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SC-70 (6-LEADS)
• Load Switch for Portable Device
D
1
6
D
D
2
5
D
D
AF
G
3
4
X
YY
Marking Code
S
Part #
Code
Top View
Lot
Traceability
and Date Code
G
S
Ordering Information: Si1404BDH-T1-E3 (Lead (Pb)-free)
Si1404BDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
2.37
TC = 70 °C
1.90
TA = 25 °C
ID
1.52b, c
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
1.89
IS
1.1b, c
2.28
1.45
PD
W
1.32b, c
0.94b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
4
TC = 25 °C
Maximum Power Dissipation
V
1.90
TA = 70 °C
Pulsed Drain Current
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t≤5s
RthJA
70
85
Steady State
RthJF
44
55
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 100 °C/W.
Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
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Si1404BDH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
27.3
ID = 250 µA
VGS(th) Temperature Coefficient
V
mV/°C
3
1.3
V
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
0.6
4
µA
A
VGS = 4.5 V, ID = 1.9
0.190
0.238
VGS = 2.5 V, ID = 1.51
0.30
0.380
VDS = 15 V, ID = 1.9
2
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
100
VDS = 15 V, VGS = 0 V, f = 1 MHz
30
VDS = 15 V, VGS = 4.5 V, ID = 1.9 A
1.8
2.7
1.1
1.7
VDS = 15 V, VGS = 2.5 V, ID = 1.9 A
0.4
20
tr
nC
0.6
f = 1 MHz
td(on)
td(off)
pF
VDD = 15 V, RL = 9.87 Ω
ID ≅ 1.52 A, VGEN = 4.5 V, Rg = 1 Ω
tf
1.5
2.3
10
15
30
45
5
7.5
10
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
0.31
4
IS = 1.1 A
IF = 1.1 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
55
85
ns
105
160
nC
34
16
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
2.0
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 5 V thru 3 V
3
VGS = 2.5 V
2
VGS = 2.0 V
1
1.5
1.0
TA = - 55 °C
0.5
TA = 25 °C
TA = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temperature
0.6
180
150
0.5
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
0.4
0.3
120
Ciss
90
60
Coss
0.2
30
0.1
Crss
0
0
1
2
3
4
5
0
5
10
15
20
25
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
2.0
5
1.7
VDS = 15 V
3
VDS = 24 V
2
1.4
1.1
VGS = 2.5 V, ID = 1.51 A
0.8
1
0
0.0
VGS = 4.5 V, ID = 1.90 A
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 1.90 A
4
0.5
1.0
1.5
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
2.0
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.9
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1.9 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.7
0.5
TA = 125 °C
0.3
TA = 25 °C
0.01
0.3
0.1
0.6
0.9
0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temp
On-Resistance vs. Gate-to-Source Voltage
1.4
20
1.3
16
1.2
12
Power (W)
VGS(th) (V)
ID = 250 µA
1.1
1.0
0.9
TA = 25 °C
8
0.8
4
0.7
0.6
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
TJ - Temperature (°C)
10-1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
1
10 ms
100 ms
0.1
1s
10 s
0.01
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.001
0.1
1000
1
100
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
1.2
Power Dissipation (W)
I D - Drain Current (A)
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.2
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
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Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73487.
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Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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