SI1406DH-T1-E3

Si1406DH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.065 at VGS = 4.5 V 3.9 0.075 at VGS = 2.5 V 3.6 0.096 at VGS = 1.8 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D AB G 3 4 XX YY Marking Code Lot Traceability and Date Code S Part # Code Top View Ordering Information: Si1406DH-T1-E3 (Lead (Pb)-free) Si1406DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 85 °C PD 3.1 2.8 2.2 10 1.4 A 0.9 1.56 1.0 0.81 0.52 TJ, Tstg Operating Junction and Storage Temperature Range V 3.9 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit °C/W Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 70684 S10-0935-Rev. C, 19-Apr-10 www.vishay.com 1 Si1406DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS(th) VDS = VGS, ID = 250 µA 0.45 IGSS VDS = 0 V, VGS = ± 8 V 1.2 V VDS = 20 V, VGS = 0 V ± 100 1 nA VDS = 20 V, VGS = 0 V, TJ = 85 °C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 8 A VGS = 4.5 V, ID = 3.9 A Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a 0.053 0.065 VGS = 2.5 V, ID = 3.6 A 0.062 0.075 VGS = 1.8 V, ID = 2 A 0.079 0.096 gfs VDS = 10 V, ID = 3.9 A 11 VSD IS = 1.4 A, VGS = 0 V 0.75 1.1 4.9 7.5 RDS(on) µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = 10 V, VGS = 4.5 V, ID = 3.9 A 0.95 VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery trr nC 1.0 IF = 1.4 A, dI/dt = 100 A/µs 27 41 47 71 54 81 29 44 35 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 V thru 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 8 6 1.5 V 4 6 4 TC = 125 °C 2 2 25 °C 1V 0 0.0 www.vishay.com 2 0.5 1.0 1.5 2.0 2.5 3.0 - 55 °C 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 70684 S10-0935-Rev. C, 19-Apr-10 Si1406DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 800 0.16 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.20 0.12 VGS = 1.8 V VGS = 2.5 V 0.08 Ciss 400 200 0.04 Coss VGS = 4.5 V 0.00 Crss 0 0 2 4 6 8 10 0 4 ID - Drain Current (A) 8 20 Capacitance 5 1.8 VGS = 4.5 V ID = 3.9 A VDS = 10 V ID = 3.9 A 1.6 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1.4 1.2 1.0 1 0.8 0 0 1 2 3 4 5 0.6 - 50 6 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.20 RDS(on) - On-Resistance (Ω) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 25 TJ - Junction Temperature (°C) Gate Charge IS - Source Current (A) 12 0.16 ID = 2 A ID = 3.9 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 70684 S10-0935-Rev. C, 19-Apr-10 5 www.vishay.com 3 Si1406DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 30 0.1 25 0.0 20 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.1 15 - 0.2 10 - 0.3 5 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 100 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 4. Surface Mounted 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70684. www.vishay.com 4 Document Number: 70684 S10-0935-Rev. C, 19-Apr-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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