SI1416EDH-T1-BE3

Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES SC-70 (6 leads) SOT-363 Single D 6 • TrenchFET® power MOSFET S 4 D 5 • Typical ESD protection 1500 V in HBM • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 D Top View 2 D 3 G APPLICATIONS • Portable devices such as smart phones and tablet PCs - DC/DC converters - High frequency switching - OVP switch - Load switch Marking code: AR PRODUCT SUMMARY VDS (V) 30 RDS(on) max. () at VGS = 10 V 0.058 RDS(on) max. () at VGS = 4.5 V 0.064 RDS(on) max. () at VGS = 2.5 V 0.077 Qg typ. (nC) 3.5 ID (A) a 3.9 Configuration D G S N-Channel MOSFET Single ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1416EDH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS ± 12 TC = 70 °C TA = 25 °C 3.9 a ID 3.9 a, b, c 3.9 a, b, c TA = 70 °C Pulsed drain current (t = 300 μs) IDM TC = 25 °C Continuous source-drain diode current TA = 25 °C Maximum power dissipation 2.3 a IS 1.3 b, c 2.8 TC = 70 °C 1.8 PD W 1.56 b, c 1 b, c TA = 70 °C Operating junction and storage temperature range A 15 TC = 25 °C TA = 25 °C V 3.9 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t5s RthJA 60 80 Maximum junction-to-foot (drain) Steady state RthJF 34 45 UNIT °C/W Notes a. Package limited, TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 125 °C/W S11-0611-Rev. A, 04-Apr-11 Document Number: 67580 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1416EDH www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 34 - - -3.3 - VDS = VGS, ID = 250 μA 0.6 - 1.4 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA VDS = 0 V, VGS = ± 12 V - - ± 20 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 10 - - VGS = 10 V, ID = 3.1 A - 0.047 0.058 VGS = 4.5 V, ID = 2 A - 0.052 0.064 VGS = 2.5 V, ID = 1 A - 0.062 0.077 VDS = 15 V, ID = 3.1 A - 13 - mV/°C V μA A  S Dynamic b Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 10 V, ID = 4 A - 7.5 12 - 3.5 5.5 VDS = 15 V, VGS = 4.5 V, ID = 4 A - 1.8 - - 0.7 - f = 1 MHz 0.6 3.3 6.6 - 20 40 td(on) tr VDD = 15 V, RL = 4.7  ID  3.2 A, VGEN = 4.5 V, Rg = 1  - 60 120 - 25 50 tf - 45 90 td(on) - 1.5 5 td(off) tr td(off) VDD = 15 V, RL = 4.7  ID  3.2 A, VGEN = 10 V, Rg = 1  tf - 30 60 - 15 30 - 50 100 nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 3.2 A, VGS = 0 V IF = 3.2 A, di/dt = 100 A/μs, TJ = 25 °C - - 3.9 - - 15 - 0.87 1.2 V - 10 20 ns - 4 10 nC - 5.3 - - 4.6 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2% b. Guaranteed by design, not subject to production testing    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-0611-Rev. A, 04-Apr-11 Document Number: 67580 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1416EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.500 10-2 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.200 0.900 TJ = 25 °C 0.600 0.300 10-4 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 10-9 0.000 10-10 0 3 6 9 12 15 0 3 6 9 12 15 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 5 15 VGS = 10 V thru 3 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 2 V 6 3 TC = 25 °C 2 TC = 125 °C 1 3 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.200 2.0 450 350 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 400 0.160 0.120 VGS = 2.5 V 0.080 VGS = 4.5 V 0.040 Ciss 300 250 200 150 100 VGS = 10 V Crss Coss 50 0.000 0 0 3 6 9 12 15 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current S11-0611-Rev. A, 04-Apr-11 30 Document Number: 67580 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1416EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 1.8 VDS = 7.5 V 1.6 6 VDS = 15 V VDS = 24 V 4 VGS = 10 V, 4.5 V, ID = 3.2 A 1.4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 4 A 1.2 VGS = 2.5 V, ID = 1 A 1.0 2 0.8 0 0 2 4 6 0.6 - 50 8 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Normalized On-Resistance vs. Junction Temperature 100 0.160 0.140 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 3.2 A 10 TJ = 150 °C TJ = 25 °C 1 0.120 0.100 TJ = 125 °C 0.080 0.060 0.040 TJ = 25 °C 0.020 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.2 10 1.1 8 Power (W) VGS(th) (V) 1.0 0.9 0.8 ID = 250 μA 6 4 0.7 2 0.6 0.5 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S11-0611-Rev. A, 04-Apr-11 Document Number: 67580 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1416EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 6 3.0 5 2.5 Package Limited 2.0 4 Power (W) ID - Drain Current (A) Safe Operating Area, Junction-to-Ambient 3 1.5 2 1.0 1 0.5 0 0 0 25 50 75 100 TL - Lead Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TL - Lead Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-0611-Rev. A, 04-Apr-11 Document Number: 67580 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1416EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67580. S11-0611-Rev. A, 04-Apr-11 Document Number: 67580 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN815 Vishay Siliconix Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION EVALUATION BOARDS
SINGLE SC70-6 The new single 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the single-channel version. The evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as in Figure 2. The board allows examination from the outer pins to 6-pin DIP connections, permitting test sockets to be used in evaluation testing. See Figure 3. 52 (mil) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended. Increasing the drain pad pattern yields a reduction in thermal resistance and is a preferred footprint. The availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the PCB and external environment. 96 (mil) 6 5 4 1 2 3 71 (mil) 26 (mil) 13 (mil) 0, 0 (mil) 18 (mil) 26 (mil) PIN-OUT 16 (mil) Figure 1 shows the pin-out description and Pin 1 identification.The pin-out of this device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S FIGURE 2. SC-70 (6 leads) Single The thermal performance of the single 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was first conducted on the traditional Alloy 42 leadframe and was then repeated using the 1-inch2 PCB with dual-side copper coating. Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Document Number: 71334 12-Dec-03 www.vishay.com 1 AN815 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) COOPER LEADFRAME Room Ambient 25 _C The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version. Thermal performance for the 6-pin SC-70 measured as junction-to-foot thermal resistance, where the “foot” is the drain lead of the device at the bottom where it meets the PCB. The junction-to-foot thermal resistance is typically 40_C/W in the copper leadframe and 163_C/W in the Alloy 42 leadframe — a four-fold improvement. This improved performance is obtained by the enhanced thermal conductivity of copper over Alloy 42. The typical RqJA for the single 6-pin SC-70 with copper leadframe is 103_C/W steady-state, compared with 212_C/W for the Alloy 42 version. The figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the two different leadframes at varying ambient temperatures. ALLOY 42 LEADFRAME PD + Rq JA Elevated Ambient 60 _C PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 212 CńW o o P D + 150 Co* 25 C 212 CńW P D + 590 mW P D + 425 mW www.vishay.com 2 T J(max) * T A T J(max) * T A Rq JA PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 124 CńW o o P D + 150 Co* 60 C 124 CńW P D + 1.01 W P D + 726 mW As can be seen from the calculations above, the compact 6-pin SC-70 copper leadframe LITTLE FOOT power MOSFET can handle up to 1 W under the stated conditions. Testing To further aid comparison of copper and Alloy 42 leadframes, Figure 5 illustrates single-channel 6-pin SC-70 thermal performance on two different board sizes and two different pad patterns. The measured steady-state values of RqJA for the two leadframes are as follows: LITTLE FOOT 6-PIN SC-70 Power Dissipation Room Ambient 25 _C PD + Elevated Ambient 60 _C 1) Minimum recommended pad pattern on the EVB board V (see Figure 3. 1-inch2 2) Industry standard PCB with maximum copper both sides. Alloy 42 Copper 329.7_C/W 208.5_C/W 211.8_C/W 103.5_C/W The results indicate that designers can reduce thermal resistance (RqJA) by 36% simply by using the copper leadframe device rather than the Alloy 42 version. In this example, a 121_C/W reduction was achieved without an increase in board area. If increasing in board size is feasible, a further 105_C/W reduction could be obtained by utilizing a 1-inch2 square PCB area. The copper leadframe versions have the following suffix: Single: Si14xxEDH Dual: Si19xxEDH Complementary: Si15xxEDH Document Number: 71334 12-Dec-03 AN815 400 250 320 200 240 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix Alloy 42 160 Copper 80 150 Alloy 42 100 50 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Leadframe Comparison on Alloy 42 1-inch2 PCB www.vishay.com 3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000