Si1426DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.075 at VGS = 10 V
3.6
0.115 at VGS = 4.5 V
2.9
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced SC-70 Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Boost Converter in Portable Devices
- Low Gate Charge (3 nC)
• Low Current Synchronous Rectifier
SOT-363
SC-70 (6-LEADS)
D
1
6
D
D
2
5
D
AC
G
3
4
XX
YY
Marking Code
Lot Traceability
and Date Code
S
Part # Code
Top View
Ordering Information: Si1426DH-T1-E3 (Lead (Pb)-free)
Si1426DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Diode Current (Diode Conduction)a
IS
TA = 25 °C
TA = 85 °C
PD
2.8
2.6
2.1
10
1.3
0.8
1.6
1.0
0.8
0.5
TJ, Tstg
Operating Junction and Storage Temperature Range
V
3.6
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
60
80
100
125
34
45
Unit
°C/W
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71805
S10-0935-Rev. B, 19-Apr-10
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Si1426DH
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
VDS = VGS, ID = 250 µA
0.80
IGSS
VDS = 0 V, VGS = ± 20 V
2.5
V
VDS = 24 V, VGS = 0 V
± 100
1
nA
VDS = 24 V, VGS = 0 V, TJ = 85 °C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
a
10
A
VGS = 10 V, ID = 3.6 A
0.061
0.075
VGS = 4.5 V, ID = 2.0 A
0.092
0.115
gfs
VDS = 10 V, ID = 3.6 A
5
VSD
IS = 1.3 A, VGS = 0 V
0.78
1.2
1.9
3
RDS(on)
Forward Transconductancea
Diode Forward Voltage
VDS = 5 V, VGS = 10 V
µA
Ω
S
V
Dynamicb
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
VDS = 15 V, VGS = 4.5 V, ID = 3.6 A
0.75
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
trr
nC
0.75
10
15
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
12
18
15
22
9
15
IF = 1.4 A, dI/dt = 100 A/µs
40
70
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
VGS = 10 V thru 5 V
4V
8
ID - Drain Current (A)
ID - Drain Current (A)
8
6
4
3V
2
6
4
TC = 125 °C
2
25 °C
- 55 °C
0
0.0
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2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
Document Number: 71805
S10-0935-Rev. B, 19-Apr-10
Si1426DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
200
VGS = 4.5 V
0.08
VGS = 10 V
150
Cosss
100
Crss
0.04
50
0.00
0
0
2
4
6
8
10
0
24
Capacitance
30
1.8
VGS = 10 V
ID = 3.6 A
1.6
R DS(on) - On-Resistance
(Normalized)
6
4
2
1.4
1.2
1.0
0.8
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.6
- 50
4.0
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
10
0.20
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
18
VDS - Drain-to-Source Voltage (V)
8
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
12
ID - Drain Current (A)
VDS = 15 V
ID = 3.6 A
0
0.0
6
On-Resistance vs. Drain Current
10
VGS - Gate-to-Source Voltage (V)
Ciss
0.12
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.16
0.16
ID = 1 A
ID = 3.6 A
0.12
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71805
S10-0935-Rev. B, 19-Apr-10
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si1426DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
30
0.2
25
0.0
20
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.2
15
- 0.4
10
- 0.6
5
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
1
0.1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 100 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71805.
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Document Number: 71805
S10-0935-Rev. B, 19-Apr-10
Legal Disclaimer Notice
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Vishay
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Revision: 01-Jan-2022
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Document Number: 91000
