SI1431DH-T1-GE3

Si1431DH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.200 at VGS = - 10 V - 2.0 0.355 at VGS = - 4.5 V - 1.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch - Notebook PC - Servers SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D BF G 3 4 XX YY Marking Code Lot Traceability and Date Code S Part # Code Top View Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free) Si1431DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current IS TA = 25 °C TA = 85 °C PD - 1.7 - 1.5 - 1.2 -8 - 1.2 - 0.8 1.45 0.95 0.75 0.5 TJ, Tstg Operating Junction and Storage Temperature Range V - 2.0 IDM Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 65 85 105 130 40 50 Unit °C/W Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 72694 S10-0646-Rev. B, 22-Mar-10 www.vishay.com 1 Si1431DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. -1 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 100 µA -3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 85 °C -5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltagea VDS = - 5 V, VGS = - 4.5 V µA -4 A VGS = - 10 V, ID = - 2.0 A 0.160 0.200 VGS = - 4.5 V, ID = - 1.6 A 0.285 0.355 gfs VDS = - 10 V, ID = - 2.0 A 2 VSD IS = - 1.2 A, VGS = 0 V - 0.85 - 1.2 2.4 4 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = - 15 V, VGS = - 4.5 V, ID = - 2.0 A 0.8 1.3 f = 1.0 MHz VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Turn-Off Delay Time td(off) Fall Time Ω 9 55 td(on) Rise Time nC tf 80 40 60 10 20 10 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 TC = - 55 °C VGS = 10 V thru 6 V 8 ID - Drain Current (A) ID - Drain Current (A) 8 5V 6 4 4V 25 °C 6 125 °C 4 2 2 3V 0 0 0 www.vishay.com 2 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 7 Document Number: 72694 S10-0646-Rev. B, 22-Mar-10 Si1431DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 300 0.80 250 0.60 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.70 VGS = 4.5 V 0.50 0.40 0.30 VGS = 10 V Ciss 200 150 100 Coss 0.20 50 0.10 Crss 0 0.00 0 2 4 6 8 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 ID = 2.0 A ID = 2.0 A 8 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Drain Current 10 VDS = 15 V 6 4 2 VGS = 10 V 1.2 1.0 0.8 0 0 1 2 3 4 0.6 - 50 5 0 25 50 75 100 125 Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 150 1.00 R DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 0.80 0.60 ID = 2.0 A 0.40 0.20 0.00 0.1 0.00 - 25 TJ - Junction Temperature (°C) 10 IS - Source Current (A) 5 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72694 S10-0646-Rev. B, 22-Mar-10 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1431DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.9 35 28 ID = 250 µA 0.3 Power (W) VGS(th) Variance (V) 0.6 0.0 21 14 TA = 25 °C - 0.3 7 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 10 10 µs Limited by R(DS)on* ID - Drain Current (A) 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms 1 s, 10 s 100 s, DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105°C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72694 S10-0646-Rev. B, 22-Mar-10 Si1431DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72694. Document Number: 72694 S10-0646-Rev. B, 22-Mar-10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1