Si1450DH
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
8
RDS(on) (Ω)
ID (A)a
0.047 at VGS = 4.5 V
4.0a
0.051 at VGS = 2.5 V
4.0a
0.058 at VGS = 1.8 V
4.0a
0.069 at VGS = 1.5 V
4.0a
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 1.5 V Rated
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.24 nC
APPLICATIONS
• Load Switch for Portable Applications
- Guaranteed Operation at VGS = 1.5 V
- Critical for Optimized Design and Space Savings
SOT-363
SC-70 (6-LEADS)
D
1
6
D
D
2
5
D
G
3
4
S
D
AH
XX
YY
Marking Code
Lot Traceability
and Date Code
G
Part # Code
Top View
S
Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)
Si1450DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
8
Gate-Source Voltage
VGS
±5
TC = 70 °C
TA = 25 °C
4.8a
ID
4.53a
3.62a
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 25 °C
15
IS
1.3c
2.78
1.78
PD
Soldering Recommendations (Peak
W
1.56b, c
1.0b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
2.3
TC = 25 °C
TC = 70 °C
V
6.04a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
- 55 to 150
Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t≤5s
RthJA
60
80
Steady State
RthJF
34
45
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
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Si1450DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
8.32
ID = 250 µA
VGS(th) Temperature Coefficient
V
mV/°C
- 2.7
1
V
VDS = 0 V, VGS = ± 5 V
± 100
ns
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
0.3
15
µA
A
VGS = 4.5 V, ID = 4.0 A
0.039
0.047
VGS = 2.5 V, ID = 4.0 A
0.042
0.051
VGS = 1.8 V, ID = 4.0 A
0.048
0.058
VGS = 1.5 V, ID = 1.28 A
0.053
0.069
VDS = 4 V, ID = 4.0 A
15.5
VDS = 4 V, VGS = 0 V, f = 1 MHz
120
VDS = 4 V, VGS = 5 V, ID = 4.0 A
4.7
7.05
4.24
6.4
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
535
61
VDS = 4 V, VGS = 4.5 V, ID = 4.0 A
td(off)
1.2
nC
0.810
f = 1 MHz
td(on)
tr
pF
VDD = 4 V, RL = 1.11 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
tf
7.3
11
8
12
73
110
18
27
5
7.5
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.6
15
IS = 2.6 A, VGS = 0 V
IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
14.3
21.45
ns
3.6
5.4
nC
6.8
7.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3
15
VGS = 5 V thru 2 V
I D - Drain Current (A)
I D - Drain Current (A)
12
VGS = 1.5 V
9
6
2
TC = 125 °C
1
TC = - 55 °C
TC = 25 °C
3
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
2.5
0.5
V DS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
800
0.08
600
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 1.5 V
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
400
200
Coss
0.02
Crss
0.00
0
0
3
6
9
12
15
0
2
6
8
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
RDS(on) vs. Drain Current
Capacitance
1.6
5
ID = 4.4 A
VGS = 4.5 V
ID = 4.6 A
VDS = 4 V
4
VGS = 6.4 V
3
2
1
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
4
1.2
VGS = 2.5 V, ID = 4.4 A
VGS = 1.8 V, ID = 4.25 A
VGS = 1.5 V
ID = 1.2 A
1.0
0.8
0
0
2
3
5
6
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
T J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
150
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Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
R DS(on) - Drain-to-Source On-Resistance (Ω)
0.08
I S - Source Current (A)
TJ = 150 °C
TJ = 25 °C
1
0.1
ID = 4.4 A
0.06
TA = 125 °C
0.04
TA = 25 °C
0.02
0.01
0.00
0
0.4
0.2
0.6
0.8
1.0
0
1
V SD - Source-to-Drain Voltage (V)
30
0.7
25
ID = 250 µA
Power (W)
VGS(th) (V)
15
0.4
10
0.3
5
0
25
50
75
100
5
20
0.5
- 25
4
RDS(on) vs. VGS vs. Temperature
0.8
0.2
- 50
3
V GS - Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temperature
0.6
2
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited by RDS(on)*
10 ms
I D - Drain Current (A)
10
100 ms
1s
10 s
1
DC
0.1
0.01
0.001
0.1
TA = 25 °C
Single Pulse
1
BVDSS Limited
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.6
8
2.8
6
Power Dissipation (W)
I D - Drain Current (A)
3.2
Package Limited
4
2
2.4
2.0
1.6
1.2
0.8
0.4
0
0.0
0
25
50
75
100
T C - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
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Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74275.
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Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
Legal Disclaimer Notice
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Vishay
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Revision: 08-Feb-17
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Document Number: 91000